參數資料
型號: 200GL120DN2
英文描述: IGBT Module
中文描述: IGBT模塊
文件頁數: 1/5頁
文件大?。?/td> 78K
代理商: 200GL120DN2
1
Nov-24-1997
BSM 200 GAL 120 DN2
IGBT Power Module
Single switch with chopper diode at collector
Chopper diode like diode of BSM300GA120DN2
Package with insulated metal base plate
Type
BSM 200 GAL 120 DN2
V
CE
1200V 290A
I
C
Package
HB 200GAL
Ordering Code
C67070-A2301-A70
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-gate voltage
R
GE
= 20 k
Gate-emitter voltage
DC collector current
T
C
= 25 °C
T
C
= 80 °C
Pulsed collector current,
t
p
= 1 ms
T
C
= 25 °C
T
C
= 80 °C
Power dissipation per IGBT
T
C
= 25 °C
Chip temperature
Storage temperature
Symbol
V
CE
V
CGR
Values
1200
Unit
V
1200
± 20
V
GE
I
C
200
290
A
I
Cpuls
400
580
P
tot
1400
+ 150
-40 ... + 125
W
T
j
T
stg
°C
Thermal resistance, chip case
Diode thermal resistance, chip case
Diode thermal resistance, chip-case,chopper
Insulation test voltage,
t
= 1min.
Creepage distance
Clearance
DIN humidity category, DIN 40 040
IEC climatic category, DIN IEC 68-1
R
thJC
R
thJC
D
R
THJC
DC
V
is
-
-
-
-
0.09
-
0.125
2500
20
11
F
40 / 125 / 56
K/W
Vac
mm
sec
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