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參數(shù)資料
| 型號(hào)： | 20ETF08S |
| 廠商： | International Rectifier |
| 英文描述： | FAST SOFT RECOVERY RECTIFIER DIODE |
| 中文描述： | 快速軟恢復(fù)整流二極管 |
| 文件頁數(shù)： | 2/8頁 |
| 文件大小： | 123K |
| 代理商： | 20ETF08S |
2
20ETF..S HV QUIET
IR
Series
I2128 rev. A 01/2000
I
F(AV)
Max. Average Forward Current
20
A
@ T
C
= 97
°
C, 180
°
conduction half sine wave
I
FSM
Max. Peak One Cycle Non-Repetitive
300
10ms Sine pulse, rated V
RRM
applied
10ms Sine pulse, no voltage reapplied
Surge Current
355
I
2
t
Max. I
2
t for fusing
450
10ms Sine pulse, rated V
RRM
applied
635
10ms Sine pulse, no voltage reapplied
I
2
√
t
Max. I
2
√
t for fusing
6350
A
2
√
s
t = 0.1 to 10ms, no voltage reapplied
Part Number
V
RRM
, maximum
peak reverse voltage
V
V
RSM
, maximum non repetitive
peak reverse voltage
V
I
RRM
150
°
C
mA
20ETF08S
800
900
20ETF10S
1000
1100
6
20ETF12S
1200
1300
Voltage Ratings
Absolute Maximum Ratings
Electrical Specifications
Recovery Characteristics
Parameters
20ETF..S
Units
Conditions
A
A
2
s
V
FM
Max. Forward Voltage Drop
1.31
V
@ 20A, T
J
= 25
°
C
r
t
V
F(TO)
Threshold voltage
Forward slope resistance
11.88
m
0.93
V
I
RM
Max. Reverse Leakage Current
0.1
T
J
= 25
°
C
6
T
J
= 150
°
C
Parameters
20ETF..S
Units
Conditions
T
J
= 150
°
C
V
R
= rated V
RRM
mA
t
rr
Reverse Recovery Time
400
ns
I
F
@ 20Apk
I
rr
Q
rr
Reverse Recovery Current
6.1
A
@ 25A/ μs
Reverse Recovery Charge
1.7
μC
@ 25
°
C
S
Snap Factor tb/ta
0.6
typical
Parameters
20ETF..S
Units
Conditions
ta
tb
trr
t
Ifm
dir
dt
Qrr
Irm (REC)
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| 20ETF10STRL | FAST SOFT RECOVERY RECTIFIER DIODE |
| 20ETF10STRR | FAST SOFT RECOVERY RECTIFIER DIODE |
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| 20ETF08SRTT | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:Fast Soft Recovery Rectifier Diode, 20 A |
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