參數(shù)資料
型號(hào): 20ETF10S
英文描述: 1000V Fast Recovery Diode in a D2-Pak package
中文描述: 1000V快恢復(fù)二極管在一項(xiàng)D2 - PAK封裝
文件頁(yè)數(shù): 2/8頁(yè)
文件大小: 126K
代理商: 20ETF10S
2
20ETF..S HV QUIET
IR
Series
I2128 rev. A 01/2000
I
F(AV)
Max. Average Forward Current
20
A
@ T
C
= 97
°
C, 180
°
conduction half sine wave
I
FSM
Max. Peak One Cycle Non-Repetitive
300
10ms Sine pulse, rated V
RRM
applied
10ms Sine pulse, no voltage reapplied
Surge Current
355
I
2
t
Max. I
2
t for fusing
450
10ms Sine pulse, rated V
RRM
applied
635
10ms Sine pulse, no voltage reapplied
I
2
t
Max. I
2
t for fusing
6350
A
2
s
t = 0.1 to 10ms, no voltage reapplied
Part Number
V
RRM
, maximum
peak reverse voltage
V
V
RSM
, maximum non repetitive
peak reverse voltage
V
I
RRM
150
°
C
mA
20ETF08S
800
900
20ETF10S
1000
1100
6
20ETF12S
1200
1300
Voltage Ratings
Absolute Maximum Ratings
Electrical Specifications
Recovery Characteristics
Parameters
20ETF..S
Units
Conditions
A
A
2
s
V
FM
Max. Forward Voltage Drop
1.31
V
@ 20A, T
J
= 25
°
C
r
t
V
F(TO)
Threshold voltage
Forward slope resistance
11.88
m
0.93
V
I
RM
Max. Reverse Leakage Current
0.1
T
J
= 25
°
C
6
T
J
= 150
°
C
Parameters
20ETF..S
Units
Conditions
T
J
= 150
°
C
V
R
= rated V
RRM
mA
t
rr
Reverse Recovery Time
400
ns
I
F
@ 20Apk
I
rr
Q
rr
Reverse Recovery Current
6.1
A
@ 25A/ μs
Reverse Recovery Charge
1.7
μC
@ 25
°
C
S
Snap Factor tb/ta
0.6
typical
Parameters
20ETF..S
Units
Conditions
ta
tb
trr
t
Ifm
dir
dt
Qrr
Irm (REC)
相關(guān)PDF資料
PDF描述
20ETF12S 1200V Fast Recovery Diode in a D2-Pak package
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