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參數(shù)資料
| 型號： | 20ETS16STRR |
| 廠商： | International Rectifier |
| 英文描述： | INPUT RECTIFIER DIODE |
| 中文描述： | 輸入整流器二極管 |
| 文件頁數(shù)： | 2/7頁 |
| 文件大?。?/td> | 142K |
| 代理商： | 20ETS16STRR |
www.irf.com
20ETS16, 20ETS16S
SAFE
IR
Series
Bulletin I2161 10/01
2
Voltage Ratings
Part Number
V
RRM
, maximum
peak reverse voltage
V
V
RSM
, maximum non repetitive
peak reverse voltage
V
I
RRM
150°C
mA
20ETS16, 20ETS16S
1600
1700
1
T
J
T
stg
R
thJC
Max. Thermal Resistance Junction
to Case
Max. Junction Temperature Range
- 40 to 150
°C
Max. Storage Temperature Range
- 40 to 150
°C
1.3
°C/W
DC operation
R
thJA
Max. Thermal Resistance Junction
to Ambient
R
thCS
Typ. Thermal Resistance Case
to Heatsink
wt
Approximate Weight
62
°C/W
(*) For D
2
Pak version
0.5
°C/W
Mounting surface, smooth and greased
2 (0.07)
g (oz.)
T
Mounting Torque
Min.
6 (5)
Max.
TO-220AC, D
2
Pak (SMD-220)
12 (10)
Case Style
Thermal-Mechanical Specifications
Parameters
20ETS..
Units
Conditions
Kg-cm
(Ibf-in)
I
F(AV)
Max. Average Forward Current
20
A
@ T
C
= 105° C, 180° conduction half sine wave
I
FSM
Max. Peak One Cycle Non-Repetitive
250
10ms Sine pulse, rated V
RRM
applied
10ms Sine pulse, no voltage reapplied
Surge Current
300
I
2
t
Max. I
2
t for fusing
316
10ms Sine pulse, rated V
RRM
applied
442
10ms Sine pulse, no voltage reapplied
I
2
√
t
Max. I
2
√
t for fusing
4420
A
2
√
s
t = 0.1 to 10ms, no voltage reapplied
Absolute Maximum Ratings
Parameters
20ETS..
Units
Conditions
A
A
2
s
Electrical Specifications
V
FM
Max. Forward Voltage Drop
1.1
V
@ 20A, T
J
= 25°C
r
t
Forward slope resistance
10.4
m
V
F(TO)
Threshold voltage
0.85
V
I
RM
Max. Reverse Leakage Current
0.1
T
J
= 25 °C
1.0
T
J
= 150 °C
Parameters
20ETS..
Units
Conditions
T
J
= 150°C
V
R
= rated V
RRM
mA
* When mounted on 1" square (650mm
2
) PCB of FR-4 or G-10 material 4 oz (140μm) copper 40°C/W
For recommended footprint and soldering techniques refer to application note # AN-994
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