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參數(shù)資料
| 型號(hào)： | 20N60BD1 |
| 廠商： | IXYS Corporation |
| 英文描述： | HiPerFAST IGBT with Diode |
| 中文描述： | HiPerFAST與IGBT的二極管 |
| 文件頁數(shù)： | 1/2頁 |
| 文件大?。?/td> | 54K |
| 代理商： | 20N60BD1 |
1 - 2
2000 IXYS All rights reserved
G = Gate,
E = Emitter,
C = Collector,
TAB = Collector
Symbol
Test Conditions
Maximum Ratings
V
CES
V
CGR
V
GES
V
GEM
I
C25
I
C90
I
CM
SSOA
(RBSOA)
T
J
= 25 C to 150 C
T
J
= 25 C to 150 C; R
GE
= 1 M
Continuous
Transient
600
600
V
V
20
30
V
V
T
C
= 25 C
T
C
= 90 C
T
C
= 25 C, 1 ms
V
= 15 V, T
= 125 C, R
= 22
Clamped inductive load, L = 100 H
40
20
80
A
A
A
I
= 40
@ 0.8 V
CES
A
P
C
T
J
T
JM
T
stg
M
d
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
T
C
= 25 C
150
W
-55 ... +150
C
C
C
150
-55 ... +150
Mounting torque (M3) TO-247AD
1.13/10 Nm/lb.in.
300
C
Weight
TO-247AD
TO-268
6
4
g
g
Symbol
Test Conditions
Characteristic Values
(T
J
= 25 C, unless otherwise specified)
min.
typ.
max.
BV
CES
V
GE(th)
I
C
I
C
= 250 A, V
GE
= 0 V
= 250 A, V
CE
= V
GE
600
2.5
V
V
5.5
I
CES
V
CE
= 0.8 V
CES
V
GE
= 0 V
T
J
= 25 C
T
J
= 150 C
200
A
3
mA
I
GES
V
CE
= 0 V, V
GE
= 20 V
100
nA
V
CE(sat)
I
C
= I
C90
, V
GE
= 15 V
1.7
2.0
V
HiPerFAST
TM
IGBT
with Diode
V
CES
I
C25
V
CE(sat)typ
= 1.7 V
t
fi(typ)
= 100 ns
= 600 V
= 40 A
98566A (3/99)
IXGH 20N60BD1
IXGT 20N60BD1
C (TAB)
GCE
TO-247 AD
(IXGH)
TO-268
(IXGT)
G
E
C (TAB)
Features
International standard packages
High frequency IGBT and antiparallel
FRED in one package
High current handling capability
HiPerFAST
TM
HDMOS
TM
process
MOS Gate turn-on
-drive simplicity
Applications
Uninterruptible power supplies (UPS)
Switched-mode and resonant-mode
power supplies
AC motor speed control
DC servo and robot drives
DC choppers
Advantages
Space savings (two devices in one
package)
High power density
Suitable for surface mounting
Very low switching losses for high
frequency applications
Easy to mount with 1 screw,TO-247
(insulated mounting screw hole)
Preliminary data
IXYS reserves the right to change limits, test conditions, and dimensions.
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