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參數(shù)資料
| 型號(hào)： | 21628 |
| 英文描述： | 1.8 Volt-only Flash Memory Technology |
| 中文描述： | 1.8伏只快閃記憶體技術(shù) |
| 文件頁(yè)數(shù)： | 5/9頁(yè) |
| 文件大?。?/td> | 75K |
| 代理商： | 21628 |
4
1.8 Volt-only Flash Memory Technology Background
Figure 2. Flash Cell Sensing
At this point a few observations can be made. The operation of the flash memory cells and
sensing circuits is analog in nature with transistors operating in their active (linear) regions.
Reliable operation of these circuits in the presence of external noise requires margin in the
design. Cycle endurance of the device is dependent on cell V
t
; that is, the difference in V
t
between the programmed state and the erased state. Finally, the performance of these circuits
is a function of the voltages applied. Reducing the external supply voltage would appear to
Comparator
V
PX
V
REF
V
BL
Bit Line
I
DS
Note: Address decodes to only one word line.
Word Line (0)
V
WL0
Word Line (1)
V
WL1
Word Line (n)
V
WLn
Cell Transistors
Active Load
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