參數(shù)資料
型號(hào): 2224-6L
元件分類(lèi): 功率晶體管
英文描述: S BAND, Si, NPN, RF POWER TRANSISTOR
封裝: HERMETIC SEALED, 55LV, 2 PIN
文件頁(yè)數(shù): 3/3頁(yè)
文件大?。?/td> 282K
代理商: 2224-6L
1999, 2000
MOS FIELD EFFECT TRANSISTOR
2SK3354
SWITCHING
N-CHANNEL POWER MOS FET
DATA SHEET
Document No.
D14131EJ4V0DS00 (4th edition)
Date Published
July 2002 NS CP(K)
Printed in Japan
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
The mark ! shows major revised points.
DESCRIPTION
The 2SK3354 is N-channel MOS Field Effect Transistor
designed for high current switching applications.
FEATURES
Super low on-state resistance:
RDS(on)1 = 8.0 m
MAX. (VGS = 10 V, ID = 42 A)
RDS(on)2 = 12 m
MAX. (VGS = 4 V, ID = 42 A)
Low Ciss: Ciss = 6300 pF TYP.
Built-in gate protection diode
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
60
V
Gate to Source Voltage (VDS = 0 V)
VGSS(AC)
±20
V
Drain Current (DC) (TC = 25°C)
ID(DC)
±83
A
Drain Current (pulse)
Note1
ID(pulse)
±332
A
Total Power Dissipation (TC = 25°C)
PT1
100
W
Total Power Dissipation (TA = 25°C)
PT2
1.5
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
–55 to +150
°C
Single Avalanche Current
Note2
IAS
55
A
Single Avalanche Energy
Note2
EAS
302
mJ
Notes 1. PW
≤ 10
s, Duty cycle ≤ 1%
2. Starting Tch = 25°C, VDD = 30 V , RG = 25 , VGS = 20
→ 0 V
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SK3354
TO-220AB
2SK3354-S
TO-262
2SK3354-ZJ
TO-263
2SK3354-Z
TO-220SMD
Note
Note TO-220SMD package is produced only
in Japan.
(TO-220AB)
(TO-262)
(TO-263, TO-220SMD)
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