參數資料
型號: 230MS8E
廠商: 美國訊泰微波有限公司上海代表處
英文描述: 4 dB LSB GaAs MMIC 3-BIT DIGITAL ATTENUATOR, 0.75 - 2.0 GHz
中文描述: 4分貝LSB的砷化鎵微波單片集成電路的3位數字衰減器,0.75 - 2.0吉赫
文件頁數: 1/6頁
文件大?。?/td> 233K
代理商: 230MS8E
A
6
6 - 8
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HMC230MS8
/
230MS8E
4 dB LSB GaAs MMIC 3-BIT DIGITAL
ATTENUATOR, 0.75 - 2.0 GHz
v02.0505
General Description
Features
Functional Diagram
4 dB LSB Steps to 28 dB
Single Positive Control Per Bit
+/- 0.5 dB Typical Bit Error
Pin - For - Pin Replacement to
AA100-59 Digital Attenuator
Electrical Specifications,
T
A
= +25° C, Vdd = +3V to +5V & Vctl = 0/Vdd (Unless Otherwise Stated)
Typical Applications
The HMC230MS8 & HMC230MS8E are broadband 3
- bit positive control GaAs IC digital attenuators in 8
lead MSOP surface mount plastic packages. Cover-
ing 0.75 to 2 GHz, the insertion loss is typically less
than 2 dB. The attenuator bit values are 4 (LSB), 8,
and 16 dB for a total attenuation of 28 dB. Accuracy
is excellent at ± 0.5 dB typical with an IIP3 of up to
+48 dBm. Three bit control voltage inputs, toggled
between 0 and +3 to +5 volts, are used to select each
attenuation state at less than 50 uA each. A single
Vdd bias of +3 to +5 volts applied through an external
5K Ohm resistor is required.
The HMC230MS8 / HMC230MS8E is ideal for:
Cellular
PCS, ISM, MMDS
WLL Handset
Base Station Infrastructure
Parameter
Frequency
Min.
Typical
Max.
Units
Insertion Loss
0.75 - 1.7 GHz
1.7 - 2.0 GHz
1.6
1.8
1.8
2.1
dB
dB
Attenuation Range
0.75 - 2.0 GHz
28
dB
Return Loss (RF1 & RF2, All Atten. States)
0.75 - 1.7 GHz
1.7 - 2.0 GHz
10
13
13
16
dB
dB
Attenuation Accuracy: (Reference to Insertion Loss)
4, 8, 12, 16, 20 dB States
24, 28 dB States
All Attenuation States
0.75 - 1.4 GHz
0.75 - 1.4 GHz
1.40 - 2.0 GHz
± 0.3 + 3% of Atten. Setting Max
± 0.4 + 6% of Atten. Setting Max
± 0.3 + 3% of Atten. Setting Max
dB
dB
dB
Input Power for 0.1 dB Compression
5V
3V
0.75 - 2.0 GHz
20
19
dBm
dBm
Input Third Order Intercept
(Two-Tone Input Power = 0 dBm Each)
5V
3V
0.75 - 2.0 GHz
46
45
dBm
dBm
Switching Characteristics
tRISE, tFALL (10/90% RF)
tON, tOFF (50% CTL to 10/90% RF)
0.75 - 2.0 GHz
560
600
ns
ns
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