- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄371379 > 23A017 TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 800MA I(C) | FO-41BVAR PDF資料下載
參數(shù)資料
| 型號： | 23A017 |
| 英文描述： | TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 800MA I(C) | FO-41BVAR |
| 中文描述： | 晶體管|晶體管|叩| 50V五（巴西）總裁| 800mA的一（c）|佛41BVAR |
| 文件頁數(shù)： | 1/2頁 |
| 文件大?。?/td> | 30K |
| 代理商： | 23A017 |
GHz TECHNOLOGY INC. RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. GHz RECOMMENDS THAT
BEFORE THE PRODUCT(S) DESCRIBED HEREIN ARE WRITTEN INTO SPECIFICATIONS, OR USED IN CRITICAL APPLICATIONS,
THAT THE PERFORMANCE CHARACTERISTICS BE VERIFIED BY CONTACTING THE FACTORY.
GHz Technology Inc. 3000 Oakmead Village Drive, Santa Clara, CA 95051-0808 Tel. 408 / 986-8031 Fax 408 / 986-8120
23A017
1.7 Watts, 20 Volts, Class A
Linear to 2300 MHz
GENERAL DESCRIPTION
The 23A017 is a COMMON EMITTER transistor capable of providing 1.7
Watts of Class A, RF output power to 2300 MHz. This transistor is
specifically designed for general Class A amplifier applications. It utilizes
gold metalization and diffused ballasting to provide high reliability and
supreme ruggedness. The transistor uses a fully hermetic High Temperature
Solder Sealed package.
CASE OUTLINE
55BT, STYLE 2
ABSOLUTE MAXIMUM RATINGS
Maximum Power Dissipation @ 25 C 6.0 Watts
Maximum Voltage and Current
BVces Collector to Emitter Voltage 50 Volts
BVebo Emitter to Base Voltage 3.5 Volts
Ic Collector Current 800 mA
Maximum Temperatures
Storage Temperature - 65 to + 200 C
Operating Junction Temperature + 200 C
ELECTRICAL CHARACTERISTICS @ 25 C
SYMBOL
CHARACTERISTICS
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Pout
Pin
Pg
Ft
VSWR
Power Out
Power Input
Power Gain
Transition Frequency
Load Mismatch Tolerance
F = 2.3 GHz
Ic = 280 mA
Vcc = 20 Volts
Vce = 20V, Ic =280 mA
1.7
6.25
3.4
2.2
7.6
3.7
.38
9:1
Watts
Watts
dB
GHz
BVebo
BVces
BVceo
h
Cob
θ
jc
Emitter to Base Breakdown
Collector to Emitter Breakdown
Collector to Emitter Breakdown
DC Current Gain
Capacitance
Thermal Resistance
Ie = 2 mA
Ic = 20 mA
Ic = 20 mA
Vce = 5 V, Ic = 200 mA
Vcb = 28V, f = 1 MHz
3.5
50
22
20
4.8
14
16
Volts
Volts
Volts
pF
C/W
o
Initial Issue June, 1994
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 23A025 | TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 1.2A I(C) | FO-41BVAR |
| 23C1010 | 1M-BIT MASK ROM (8 BIT OUTPUT) |
| 23C1610-10 | 5 Volt 16-Mbit (2M x 8 / 1M x 16) Mask ROM |
| 23C1610-12 | 5 Volt 16-Mbit (2M x 8 / 1M x 16) Mask ROM |
| 23C1610-15 | 5 Volt 16-Mbit (2M x 8 / 1M x 16) Mask ROM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 23A01880 | 制造商:DANAHER - INDUSTRIAL/SPECIALTY 功能描述:CONNECTOR |
| 23A025 | 制造商:Microsemi Corporation 功能描述:LDMOS TRANSISTOR - Bulk 制造商:Microsemi Corporation 功能描述:TRANS BIPO 55BT-2 制造商:Microsemi Corporation 功能描述:RF POWER TRANSISTOR BIPOLAR/HBT |
| 23A-03 | 制造商:Aeroflex / Inmet 功能描述:ATTENUATOR - FIXED COAXIAL |
| 23A05Z8K | 制造商:Quam-Nichols Manufacturing 功能描述: |
| 23A-06 | 制造商:Aeroflex / Inmet 功能描述:ATTENUATOR - FIXED COAXIAL |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。