參數(shù)資料
型號(hào): 23C8000-15
廠商: Macronix International Co., Ltd.
英文描述: 8M-BIT [1M x 8] CMOS MASK ROM
中文描述: 800萬位[100萬× 8]的CMOS掩膜ROM
文件頁數(shù): 3/11頁
文件大小: 647K
代理商: 23C8000-15
3
P/N:PM0137
REV. 4.3, JUL. 03, 2003
MX23C8000
CAPACITANCE
(Ta = 25
°
C, f=1.0MHz (Note 2))
Item
Input Capacitance
Output Capacitance
Symbol
CIN
COUT
MIN.
-
-
MAX.
10
10
UNIT
pF
pF
Conditions
VIN=0V
VOUT=0V
DC CHARACTERISTICS
(Ta = 0
°
C ~ 70
°
C, VCC = 5.0V
±
10%)
Item
Output High Voltage
Output Low Voltage
Input High Voltage
Input Low Voltage
Input Leakage Current
Output Leakage Current
Power-Down Supply Current
Standby Supply Current
Operating Supply Current
Symbol
VOH
VOL
VIH
VIL
ILI
ILO
ICC3
ICC2
ICC1
MIN.
2.4V
-
2.2V
-0.3V
-
-
-
-
-
MAX.
-
0.4V
VCC+0.3V
0.8V
10uA
10uA
15uA
1.0mA
25mA
Conditions
IOH = -1.0mA
IOL = 2.1mA
VIN=0 to 5.5V
VOUT=0 to 5.5V
CE>VCC-0.2V
CE=VIH
Note 1
Note:
1. Measured with device selected at f=5MHz and output unloaded.
2. This parameter is periodically sampled and is not 100% teseted.
3. Output low-impedance delay (tLA) is measured from CE going low.
4. Output high-impedance delay (tHZ) is measured from CE going high.
AC CHARACTERISTICS
(Ta = -10
°
C ~ 70
°
C, VCC = 5.0V
±
10%)
23C8000-10
23C8000-12
MIN.
120ns
-
0ns
23C8000-15
MIN.
150ns
-
0ns
23C8000-20
MIN.
200ns
-
0ns
PARAMETER
Cycle Time
Address Access Time
Output Hold Time After
Address Change
Chip Enable Access Time
Output Enable/Chip Select tOE
Access Time
Output Low Z Delay
Output High Z Delay
SYMBOL MIN.
tCYC
tAA
tOH
MAX.
MAX.
-
120ns
-
MAX.
-
150ns
-
MAX.
-
200ns
-
CONDITIONS
100ns -
-
0ns
100ns
-
tCE
-
-
100ns
50ns
-
-
120ns
50ns
-
-
150ns
50ns
-
-
200ns
50ns
tLZ
tHZ
0ns
-
-
20ns
0ns
-
-
20ns
0ns
-
-
20ns
0ns
-
-
20ns
Note 3
Note 4
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