參數(shù)資料
型號(hào): 24502BVA
廠商: INTERSIL CORP
元件分類: DRAM
英文描述: 1024 x 4 CMOS RAM
中文描述: 1K X 4 STANDARD SRAM, 120 ns, CDIP18
封裝: CERAMIC, DIP-18
文件頁(yè)數(shù): 3/7頁(yè)
文件大?。?/td> 41K
代理商: 24502BVA
6-3
Absolute Maximum Ratings
Thermal Information
Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .+7.0V
Input, Output or I/O Voltage . . . . . . . . . . . GND -0.3V to V
CC
+0.3V
ESD Classification . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Class 1
Operating Conditions
Operating Voltage Range . . . . . . . . . . . . . . . . . . . . . +4.5V to +5.5V
Operating Temperature Ranges:
HM-6514S-9, HM-6514B-9, HM-6514-9. . . . . . . . -40
o
C to +85
o
C
HM-6514B-8, HM-6514-8 . . . . . . . . . . . . . . . . . . -55
o
C to +125
o
C
Thermal Resistance (Typical)
CERDIP Package . . . . . . . . . . . . . . . .
PDIP Package . . . . . . . . . . . . . . . . . . .
CLCC Package . . . . . . . . . . . . . . . . . .
Maximum Storage Temperature Range . . . . . . . . .-65
o
C to +150
o
C
Maximum Junction Temperature
Ceramic Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .+175
o
C
Plastic Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .+150
o
C
Maximum Lead Temperature (Soldering 10s). . . . . . . . . . . .+300
o
C
θ
JA
θ
JC
75
o
C/W
75
o
C/W
90
o
C/W
15
o
C/W
N/A
33
o
C/W
Die Characteristics
Gate Count . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .6910 Gates
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation
of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
DC Electrical Specifications
V
CC
= 5V
±
10%; T
A
= -40
o
C to +85
o
C (HM-6514S-9, HM-6514B-9, HM-6514-9)
T
A
= -55
o
C to +125
o
C (HM-6514B-8, HM-6514-8)
SYMBOL
PARAMETER
LIMITS
UNITS
TEST CONDITIONS
MIN
MAX
ICCSB
Standby Supply Current
HM-6514-9
-
25
μ
A
IO = 0mA, E = V
CC
-0.3V, V
CC
= 5.5V
HM-6514-8
-
50
μ
A
ICCOP
Operating Supply Current (Note 1)
-
7
mA
E = 1MHz, IO = 0mA, VI = GND,
V
CC
= 5.5V
ICCDR
Data Retention Supply
Current
HM-6514-9
-
15
μ
A
IO = 0mA, V
CC
= 2.0V, E = V
CC
HM-6514-8
-
25
μ
A
VCCDR
Data Retention Supply Voltage
2.0
-
V
II
Input Leakage Current
-1.0
+1.0
μ
A
VI = V
CC
or GND, V
CC
= 5.5V
IIOZ
Input/Output Leakage Current
-1.0
+1.0
μ
A
VIO = V
CC
or GND, V
CC
= 5.5V
VIL
Input Low Voltage
-0.3
0.8
V
V
CC
= 4.5V
VIH
Input High Voltage
V
CC
-2.0
V
CC
+0.3
V
V
CC
= 5.5V
VOL
Output Low Voltage
-
0.4
V
IO = 2.0mA, V
CC
= 4.5V
VOH1
Output High Voltage
2.4
-
V
IO = -1.0mA, V
CC
= 4.5V
VOH2
Output High Voltage (Note 2)
V
CC
-0.4
-
V
IO = -100
μ
A, V
CC
= 4.5V
Capacitance
T
A
= +25
o
C
SYMBOL
PARAMETER
MAX
UNITS
TEST CONDITIONS
CI
Input Capacitance (Note 2)
8
pF
f = 1MHz, All measurements are
referenced to device GND
CIO
Input/Output Capacitance (Note 2)
10
pF
NOTES:
1. Typical derating 5mA/MHz increase in ICCOP.
2. Tested at initial design and after major design changes.
HM-6514
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