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| 型號(hào)： | 24AA256T-EST |
| 廠商： | Microchip Technology Inc. |
| 英文描述： | I2C⑩ Serial EEPROM Family Data Sheet |
| 中文描述： | ⑩的I2C串行EEPROM系列數(shù)據(jù)手冊(cè) |
| 文件頁(yè)數(shù)： | 17/42頁(yè) |
| 文件大?。?/td> | 540K |
| 代理商： | 24AA256T-EST |
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2007 Microchip Technology Inc.
DS21930B-page 17
24AAXX/24LCXX/24FCXX
6.2
Page Write
The write control byte, word address byte(s), and the
first data byte are transmitted to the 24XX in much the
same way as in a byte write (see Figure 6-3 and
Figure 6-4). The exception is that instead of generating
a Stop condition, the master transmits up to one page
of bytes
(1)
, which is temporarily stored in the on-chip
page buffer. This data is then written into memory once
the master has transmitted a Stop condition. Upon
receipt of each word, the internal address counter is
incremented by one. If the master should transmit more
than one page of data prior to generating the Stop con-
dition, the address counter will roll over and the previ-
ously received data will be overwritten. As with the byte
write operation, once the Stop condition is received, an
internal write cycle begins. During the write cycle, the
24XX will not acknowledge commands.
Page writes can be any number of bytes within a page
(up to the page size), starting at any address. Only the
data bytes being addressed will be changed within the
page.
If an attempt is made to write to the array with the WP
pin held high, the device will acknowledge the
command, but no write cycle will occur, no data will be
written and the device will immediately accept a new
command.
6.3
Write-Protection
The WP pin allows the user to write-protect the array
when the pin is tied to V
CC
. See Device Selection
Table 1-1 for the write-protect scheme of each device.
If tied to V
SS
, the write protection is disabled. The WP
pin is sampled prior to the Stop bit for every Write
command (Figure 2-1). Toggling the WP pin after the
Stop bit will have no effect on the execution of the write
cycle.
FIGURE 6-3:
PAGE WRITE: 1 KB TO 16 KBIT DEVICES
FIGURE 6-4:
PAGE WRITE: 32 TO 512 KBIT DEVICES
* See Table 1-1 for maximum number of data bytes in a page.
Note 1:
See Device Selection Table 1-1 for the
page size of each device.
Note:
Page write operations are limited to
writing bytes within a single physical
page,
regardless
of the number of
bytes actually being written. Physical
page boundaries start at addresses
that are integer multiples of the page
buffer size (or ‘page size’) and end at
addresses that are integer multiples of
[page size – 1]. If a Page Write
command attempts to write across a
physical page boundary, the result is
that the data wraps around to the
beginning of the current page (over-
writing data previously stored there),
instead of being written to the next
page, as might be expected. It is there-
fore necessary for the application soft-
ware to prevent page write operations
that would attempt to cross a page
boundary.
S
P
Bus Activity
Master
SDA Line
Bus Activity
S
T
A
R
T
Control
Byte
Address
Byte
Initial
Data Byte
Final
Data Byte*
S
T
O
P
A
C
K
A
C
K
A
C
K
A
C
K
A
C
K
Second
Data Byte
Bus Activity
Master
SDA Line
Bus Activity
S
T
A
R
T
Control
Byte
High Order
Address Byte
Low Order
Address Byte
Initial
Data Byte
S
T
O
P
A
C
K
A
C
K
A
C
K
A
C
K
Final
A
C
K
S
P
Data Byte*
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 24AA512-EMC | I2C⑩ Serial EEPROM Family Data Sheet |
| 24AA512-EMF | I2C⑩ Serial EEPROM Family Data Sheet |
| 24AA512-EMS | I2C⑩ Serial EEPROM Family Data Sheet |
| 24AA512-EOT | I2C⑩ Serial EEPROM Family Data Sheet |
| 24AA512-EP | I2C⑩ Serial EEPROM Family Data Sheet |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 24AA256T-I/CS16K | 功能描述:電可擦除可編程只讀存儲(chǔ)器 256K 32K X 8 1.8V SER EE IND RoHS:否 制造商:Intersil 存儲(chǔ)容量: 組織: 數(shù)據(jù)保留: 最大時(shí)鐘頻率: 最大工作電流: 工作電源電壓: 最大工作溫度: 安裝風(fēng)格: 封裝 / 箱體: |
| 24AA256T-I/MF | 功能描述:電可擦除可編程只讀存儲(chǔ)器 256K 32K X 8 1.8V SER EE IND RoHS:否 制造商:Atmel 存儲(chǔ)容量:2 Kbit 組織:256 B x 8 數(shù)據(jù)保留:100 yr 最大時(shí)鐘頻率:1000 KHz 最大工作電流:6 uA 工作電源電壓:1.7 V to 5.5 V 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 |
| 24AA256T-I/MNY | 功能描述:電可擦除可編程只讀存儲(chǔ)器 256K, 32Kx8, 1.8V SER EE, ExT RoHS:否 制造商:Atmel 存儲(chǔ)容量:2 Kbit 組織:256 B x 8 數(shù)據(jù)保留:100 yr 最大時(shí)鐘頻率:1000 KHz 最大工作電流:6 uA 工作電源電壓:1.7 V to 5.5 V 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 |
| 24AA256T-I/MS | 功能描述:電可擦除可編程只讀存儲(chǔ)器 32kx8 - 1.8V RoHS:否 制造商:Atmel 存儲(chǔ)容量:2 Kbit 組織:256 B x 8 數(shù)據(jù)保留:100 yr 最大時(shí)鐘頻率:1000 KHz 最大工作電流:6 uA 工作電源電壓:1.7 V to 5.5 V 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 |
| 24AA256T-I/MSG | 功能描述:電可擦除可編程只讀存儲(chǔ)器 32kx8 - 1.8V Lead Free Package RoHS:否 制造商:Atmel 存儲(chǔ)容量:2 Kbit 組織:256 B x 8 數(shù)據(jù)保留:100 yr 最大時(shí)鐘頻率:1000 KHz 最大工作電流:6 uA 工作電源電壓:1.7 V to 5.5 V 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 |
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