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參數(shù)資料
| 型號(hào)： | 24C016 |
| 廠商： | Integrated Silicon Solution, Inc. |
| 英文描述： | 1K-bit/2K-bit/4K-bit/8K-bit/16K-bit 2-WIRE SERIAL CMOS EEPROM |
| 中文描述： | 1K-bit/2K-bit/4K-bit/8K-bit/16K-bit 2線串行EEPROM中的CMOS |
| 文件頁(yè)數(shù)： | 11/16頁(yè) |
| 文件大?。?/td> | 57K |
| 代理商： | 24C016 |
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Integrated Silicon Solution, Inc. — www.issi.com —
1-800-379-4774
Rev. D
06/25/02
11
IS24C01
IS24C02
IS24C04
IS24C08 IS24C16
ISSI
POWER SUPPLY CHARACTERISTICS
Symbol
Parameter
Test Conditions
Min.
Max.
Unit
I
CC
1
Vcc Operating Current
READ at 100 KHz (Vcc = 5V)
—
1.0
mA
I
CC
2
Vcc Operating Current
WRITE at 100 KHz (Vcc = 5V)
—
3.0
mA
I
SB
1
Standby Current
Vcc = 1.8V
—
4.0
μA
I
SB
2
Standby Current
Vcc = 5.5V
—
8.0
μA
CAPACITANCE
(1,2)
Symbol
Parameter
Conditions
Max.
Unit
C
IN
Input Capacitance
V
IN
= 0V
6
pF
C
OUT
Output Capacitance
V
OUT
= 0V
8
pF
Notes:
1. Tested initially and after any design or process changes that may affect these parameters.
2. Test conditions: T
A
= 25°C, f = 1 MHz, Vcc = 5.0V.
DC ELECTRICAL CHARACTERISTICS
Symbol
Parameter
Test Conditions
Min.
Max.
Unit
V
OL
1
Output LOW Voltage
V
CC
= 1.8V, I
OL
= 0.15 mA
—
0.2
V
V
OL
2
Output LOW Voltage
V
CC
= 2.5V, I
OL
= 1.0 mA
—
0.4
V
V
IH
Input HIGH Voltage
V
CC
X
0.7 V
CC
+ 0.5
V
V
IL
Input LOW Voltage
–1.0
V
CC
X
0.3
V
I
LI
Input Leakage Current
V
IN
= V
CC
max.
—
3
μA
I
LO
Output Leakage Current
—
3
μA
Notes:
V
IL
min and V
IH
max are reference only and are not tested.
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