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參數(shù)資料
| 型號(hào)： | 2501N |
| 廠商： | Fairchild Semiconductor Corporation |
| 英文描述： | Dual N-Channel 2.5V Specified PowerTrench MOSFET |
| 中文描述： | 雙N溝道MOSFET的為2.5V指定的PowerTrench |
| 文件頁(yè)數(shù)： | 1/5頁(yè) |
| 文件大?。?/td> | 121K |
| 代理商： | 2501N |
March 2004
2004 Fairchild Semiconductor Corporation
FDW2501N Rev E(W)
FDW2501N
Dual N-Channel 2.5V Specified PowerTrench
ò
MOSFET
General Description
This N-Channel 2.5V specified MOSFET is a rugged
gate version of Fairchild Semiconductor’s advanced
PowerTrench process. It has been optimized for power
management applications with a wide range of gate
drive voltage (2.5V – 12V).
Applications
Load switch
Motor drive
DC/DC conversion
Power management
Features
6 A, 20 V.
R
DS(ON)
= 0.018
@ V
GS
= 4.5V
R
DS(ON)
= 0.028
@ V
GS
= 2.5V
Extended V
GSS
range (±12V) for battery applications.
High performance trench technology for extremely
low R
DS(ON)
Low profile TSSOP-8 package
D1
S1
S1
G1
D2
S2
S2
G2
TSSOP-8
Pin 1
8
7
6
5
1
2
3
4
Absolute Maximum Ratings
T
A
=25
o
C unless otherwise noted
Symbol
Parameter
V
DSS
Drain-Source Voltage
V
GSS
Gate-Source Voltage
I
D
Drain Current
– Continuous
– Pulsed
P
D
Power Dissipation
Ratings
20
±
12
6
30
1.0
0.6
-55 to +150
Units
V
V
A
(Note 1a)
(Note 1a)
W
(Note 1b)
T
J
, T
STG
Operating and Storage Junction Temperature Range
°
C
Thermal Characteristics
R
θ
JA
Thermal Resistance, Junction-to-Ambient
(Note 1a)
125
208
°
C/W
(Note 1b)
Package Marking and Ordering Information
Device Marking
Device
2501N
FDW2501N
Reel Size
13’’
Tape width
12mm
Quantity
3000 units
F
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2501NZ | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Dual N-Channel 2.5V Specified PowerTrench MOSFET |
| 2501PDK40 | 制造商:n/a 功能描述:Diode Puck |
| 2501S1W34B | 制造商:SQUARE D 功能描述:Coil |
| 2501-W20-26-C3C | 制造商: 功能描述: 制造商:undefined 功能描述: |
| 250-1X | 制造商:TE Connectivity 功能描述: |
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