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參數(shù)資料
| 型號： | 2502P |
| 廠商： | Fairchild Semiconductor Corporation |
| 英文描述： | Dual P-Channel 2.5V Specified PowerTrench MOSFET |
| 中文描述： | 雙P溝道MOSFET的為2.5V指定的PowerTrench |
| 文件頁數(shù)： | 3/5頁 |
| 文件大?。?/td> | 150K |
| 代理商： | 2502P |
FDW2502P Rev. F (W)
Typical Characteristics
0
10
20
30
0
1
2
3
4
5
-V
DS
, DRAIN TO SOURCE VOLTAGE (V)
-
D
,
V
GS
= -4.5V
-2.5V
-2.0V
-3.0V
-3.5V
0.8
1
1.2
1.4
1.6
1.8
2
2.2
0
10
-I
D
, DRAIN CURRENT (A)
20
30
R
D
,
D
V
GS
= - 2.0V
-4.5V
-3.0V
-3.5V
-2.5V
-4.0V
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
0.8
0.9
1
1.1
1.2
1.3
1.4
-50
-25
0
25
50
75
100
125
150
T
J
, JUNCTION TEMPERATURE (
C)
R
D
,
I
D
= -4.4A
V
GS
= - 4.5V
0.01
0.03
0.05
0.07
0.09
1
2
3
-V
GS
, G4
5
6
7
8
9
10
R
D
,
I
D
= -2.2A
T
A
= 125
o
C
T
A
= 25
o
C
Figure 3. On-Resistance Variation with
Temperature.
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
0
5
10
15
20
25
30
0.5
1
1.5
2
2.5
3
-V
GS
, GATE TO SOURCE VOLTAGE (V)
-
D
,
T
A
= -55
o
C
25
o
C
125
o
C
V
DS
= -5V
0.0001
0.001
0.01
0.1
1
10
0
0.2
-V
SD
,
BOD0.4
0.6
0.8
1
1.2
-
S
,
V
GS
= 0V
T
A
= 125
o
C
25
o
C
-55
o
C
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
F
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