- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄371407 > 25C080 (Microchip Technology Inc.) 8K 5.0V SPI Bus Serial EEPROM(4.5~5.5V,3MHz,8K位,10M次可自定時擦寫周期,EEPROM) PDF資料下載
參數(shù)資料
| 型號： | 25C080 |
| 廠商： | Microchip Technology Inc. |
| 英文描述： | 8K 5.0V SPI Bus Serial EEPROM(4.5~5.5V,3MHz,8K位,10M次可自定時擦寫周期,EEPROM) |
| 中文描述： | 8K的5.0V SPI總線串行EEPROM（4.5?5.5V之間，3MHz的，8K的位，1000萬次可自定時擦寫周期和EEPROM） |
| 文件頁數(shù)： | 7/12頁 |
| 文件大?。?/td> | 85K |
| 代理商： | 25C080 |
1996 Microchip Technology Inc.
Preliminary
DS21147F-page 7
25C080/160
2.3
Write Status Register (WRSR)
The WRSR instruction allows the user to select one of
four protection options for the array by writing to the
appropriate bits in the status register. The array is
divided up into four segments. The user has the ability
to write protect none, one, two, or all four of the seg-
ments of the array. The partitioning is controlled as illus-
trated in table below. See Figure 3-6 for WRSR timing
sequence.
TABLE 2-3:
ARRAY PROTECTION
3.0
DEVICE OPERATION
3.1
Clock and Data Timing
Data input on the SI pin is latched on the rising edge of
SCK. Data is output on the SO pin after the falling edge
of SCK.
3.2
Read Sequence
The part is selected by pulling CS low. The 8-bit read
instruction is transmitted to the 25C080/160 followed by
the 16-bit address, with the five (25C160) or six
(25C080) MSBs of the address being don’t care bits.
After the correct read instruction and address are sent,
the data stored in the memory at the selected address
is shifted out on the SO pin. The data stored in the
memory at the next address can be read sequentially
by continuing to provide clock pulses. The internal
address pointer is automatically incremented to the
next higher address after each byte of data is shifted
out. When the highest address is reached ($3FF for
25C080, $7FF for 25C160) the address counter rolls
over to address $000 allowing the read cycle to be con-
tinued indefinitely. The read operation is terminated by
setting CS high (see Figure 3-1).
3.3
Write Sequence
Prior to any attempt to write data to the 25C080/160,
the write enable latch must be set by issuing the WREN
instruction (Figure 3-2). This is done by setting CS low
and then clocking the proper instruction into the
25C080/160. After all eight bits of the instruction are
transmitted, the CS must be brought high to set the
write enable latch. If the write operation is initiated
BP1
BP0
Array Addresses
Write Protected
none
upper 1/4
300h-3FFh for 25C080
600h-7FFh for 25C160
upper 1/2
200h-3FFh for 25C080
400h-7FFh for 25C160
all
000h-3FFh for 25C080
000h-7FFh for 25C160
0
0
0
1
1
0
1
1
immediately after the WREN instruction without CS
being brought high, the data will not be written to the
array because the write enable latch will not have been
properly set.
Once the write enable latch is set, the user may pro-
ceed by setting the CS low, issuing a write instruction,
followed by the 16-bit address, with the five (25C160) or
six (25C080) MSBs of the address being don’t care bits,
and then the data to be written. Up to 16 bytes of data
can be sent to the 25C080/160 before a write cycle is
necessary. The only restriction is that all of the bytes
must reside in the same page. A page address begins
with XXXX XXXX XXXX 0000 and ends with XXXX
XXXX XXXX 1111. If the internal address counter
reaches XXXX XXXX XXXX 1111 and the clock contin-
ues, the counter will roll back to the first address of the
page and overwrite any data in the page that may have
been written.
For the data to be actually written to the array, the CS
must be brought high after the least significant bit (D0)
of the n
th
data byte has been clocked in. If CS is brought
high at any other time, the write operation will not be
completed. See Figure 3-3 and Figure 3-4 for more
detailed illustrations on the byte write sequence and the
page write sequence, respectively.
While the write is in progress, the status register may
be read to check the status of the WPEN, WIP, WEL,
BP1, and BP0 bits. A read attempt of a memory array
location will not be possible during a write cycle. When
a write cycle is completed, the write enable latch is
reset
3.4
Data Protection
The following protection has been implemented to pre-
vent inadvertent writes to the array:
The write enable latch is reset on power-up.
A write enable instruction must be issued to set
the write enable latch.
After a successful byte write, page write, or status
register write, the write enable latch is reset.
CS must be set high after the proper number of
clock cycles to start an internal write cycle.
Access to the array during an internal write cycle
is ignored and programming is continued.
3.5
Power On State
The 25C080/160 powers on in the following state:
The device is in low power standby mode (CS=1).
The write enable latch is reset.
SO is in high impedance state.
A low level on CS is required to enter active state.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 25C320 | 32K 5.0V SPI Bus Serial EEPROM |
| 25C320T | 32K SPI Bus Serial EEPROM |
| 25C320X | SENSOR REFLECTIVE OBJECT 50MA |
| 25C320XT | SENSOR REFLECTIVE OBJECT |
| 25CE224-RO | Speaker |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 25C080/P | 功能描述:電可擦除可編程只讀存儲器 1kx8 5V RoHS:否 制造商:Atmel 存儲容量:2 Kbit 組織:256 B x 8 數(shù)據(jù)保留:100 yr 最大時鐘頻率:1000 KHz 最大工作電流:6 uA 工作電源電壓:1.7 V to 5.5 V 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 |
| 25C080/SN | 功能描述:電可擦除可編程只讀存儲器 1kx8 - 5V RoHS:否 制造商:Atmel 存儲容量:2 Kbit 組織:256 B x 8 數(shù)據(jù)保留:100 yr 最大時鐘頻率:1000 KHz 最大工作電流:6 uA 工作電源電壓:1.7 V to 5.5 V 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 |
| 25C080E/P | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:SPI Serial EEPROM |
| 25C080-E/P | 功能描述:電可擦除可編程只讀存儲器 1kx8 - 5V RoHS:否 制造商:Atmel 存儲容量:2 Kbit 組織:256 B x 8 數(shù)據(jù)保留:100 yr 最大時鐘頻率:1000 KHz 最大工作電流:6 uA 工作電源電壓:1.7 V to 5.5 V 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 |
| 25C080E/SN | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:SPI Serial EEPROM |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。