參數(shù)資料
型號(hào): 25C320T
廠商: Microchip Technology Inc.
元件分類(lèi): EEPROM
英文描述: 32K SPI Bus Serial EEPROM
中文描述: 32K的SPI總線串行EEPROM
文件頁(yè)數(shù): 2/12頁(yè)
文件大?。?/td> 86K
代理商: 25C320T
25C320
DS21159B-page 2
Preliminary
1996 Microchip Technology Inc.
1.0
ELECTRICAL
CHARACTERISTICS
1.1
Maximum Ratings*
V
All inputs and outputs w.r.t. V
Storage temperature ............................ -65
Ambient temperature under bias.......... -65
Soldering temperature of leads
(10 seconds) .................................................... +300
ESD protection on all pins..................................... 4 kV
*Notice:
Stresses above those listed under ‘Maximum ratings’
may cause permanent damage to the device. This is a stress rat-
ing only and functional operation of the device at those or any
other conditions above those indicated in the operational listings
of this specification is not implied. Exposure to maximum rating
conditions for extended period of time may affect device reliability
CC
........................................................................7.0V
SS
.......-0.6V to V
CC
+1.0V
°
°
C to 150
C to 125
°
°
C
C
°
C
TABLE 1-1:
PIN FUNCTION TABLE
Name
CS
SO
SI
SCK
WP
V
SS
V
CC
HOLD
NC
Function
Chip Select Input
Serial Data Output
Serial Data Input
Serial Clock Input
Write Protect Pin
Ground
Supply Voltage
Hold Input
No Connect
FIGURE 1-1: AC TEST CIRCUIT
Vcc
1.2
AC Test Conditions
AC Waveform:
V
LO
V
HI
V
HI
= 0.2V
= Vcc - 0.2V
= 4.0V
(Note 1)
(Note 2)
Timing Measurement Reference Level
Input
Output
Note 1: For V
CC
2: For V
CC
> 4.0V
0.5 V
0.5 V
CC
CC
4.0V
SO
100 pF
1.8 K
2.25 K
TABLE 1-2:
DC CHARACTERISTICS
Applicable over recommended operating ranges shown below unless otherwise noted:
V
CC
= 4.5V to 5.5V
Commercial (C):
Tamb = 0
°
C to +70C
Industrial (I):
Tamb =-40C to +85C
Automotive (E):
Tamb = -40
°
C to +125
°
C
Parameter
Symbol
Min
Max
Units
Test Conditions
High level input voltage
V
IH
2.0
V
CC
+1
V
Low level input voltage
V
IL
-0.3
0.8
V
Low level output voltage
V
OL
0.4
V
I
OL
=2.1 mA
High level output voltage
V
OH
V
CC
-0.5
V
I
OH
=-400
μ
A
Input leakage current
I
LI
-10
10
μ
A
CS=V
IH
, V
IN
=GND to V
CC
Output leakage current
I
LO
-10
10
μ
A
CS=V
IH
, V
OUT
=GND to V
CC
Internal Capacitance
(all inputs and outputs)
C
INT
7
pF
Tamb=25
V
CC
=5.5V (Note)
°
C, F
CLK
=1.0 MHz,
Operating Current
I
CC write
——
5
mA
V
CC
=5.5V; SO=Open
I
CC
read
1
mA
V
CC
=5.5V; SO=Open, F
CLK
=3.0 MHz
Standby Current
I
CCS
5
μ
A
CS=V
CC
=5.5V; V
IN
=Gnd or V
CC
Note:
This parameter is periodically sampled and not 100% tested.
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