參數(shù)資料
型號(hào): 25GD120DN2E
英文描述: Complete, 100ksps, 8-Channel, 12-Bit Data Acquisition Systems
中文描述: IGBT模塊
文件頁(yè)數(shù): 1/9頁(yè)
文件大小: 250K
代理商: 25GD120DN2E
1
Oct-20-1997
BSM 25 GD 120 DN2
IGBT Power Module
Power module
3-phase full-bridge
Including fast free-wheel diodes
Package with insulated metal base plate
Type
BSM 25 GD 120 DN2
BSM 25 GD120DN2E3224
V
CE
1200V 35A
1200V 35A
I
C
Package
ECONOPACK 2
ECONOPACK 2K
Ordering Code
C67076-A2505-A67
C67070-A2505-A67
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-gate voltage
R
GE
= 20 k
Gate-emitter voltage
DC collector current
T
C
= 25 °C
T
C
= 80 °C
Pulsed collector current,
t
p
= 1 ms
T
C
= 25 °C
T
C
= 80 °C
Power dissipation per IGBT
T
C
= 25 °C
Chip temperature
Storage temperature
Symbol
V
CE
V
CGR
Values
1200
Unit
V
1200
± 20
V
GE
I
C
25
35
A
I
Cpuls
50
70
P
tot
200
+ 150
W
T
j
T
stg
°C
-40 ... + 125
Thermal resistance, chip case
Diode thermal resistance, chip case
Insulation test voltage,
t
= 1min.
Creepage distance
Clearance
DIN humidity category, DIN 40 040
IEC climatic category, DIN IEC 68-1
R
thJC
R
thJC
D
V
is
-
-
-
-
0.6
1
2500
16
11
F
K/W
Vac
mm
sec
40 / 125 / 56
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