參數(shù)資料
型號: 25MT060WFA
廠商: VISHAY INTERTECHNOLOGY INC
元件分類: IGBT 晶體管
英文描述: 50 A, 600 V, N-CHANNEL IGBT
封裝: MTP, 16 PIN
文件頁數(shù): 1/10頁
文件大?。?/td> 295K
代理商: 25MT060WFA
VCES
Collector-to-Emitter Voltage
600
V
IC
Continuos Collector Current
@ TC = 72°C
50
A
@ TC = 100°C
32
ICM
Pulsed Collector Current
200
ILM
Peak Switching Current
200
I F
Diode Continuous Forward Current
@ TC = 100°C
25
IFM
Peak Diode Forward Current
200
VGE
Gate-to-Emitter Voltage
± 20
V
VISOL
RMS Isolation Voltage, Any Terminal to Case, t = 1 min
2500
PD
Maximum Power Dissipation
@ TC = 25°C
195
W
per single IGBT
@ TC = 100°C
78
25MT060WFA
50 A
VCES = 600V
Absolute Maximum Ratings
"FULL-BRIDGE" IGBT MTP
Parameters
Max
Units
Warp Speed IGBT
Gen. 4 Warp Speed IGBT Technology
HEXFRED TM Antiparallel Diodes with
UltraSoft Reverse Recovery
Very Low Conduction and Switching Losses
Optional SMT Thermistor
Al2O3 DBC
Very Low Stray Inductance Design for
High Speed Operation
Features
Optimized for Welding, UPS and SMPS
Applications
Operating Frequencies > 20 kHz Hard Switching,
>200 kHz Resonant Mode
Low EMI, requires Less Snubbing
Direct Mounting to Heatsink
PCB Solderable Terminals
Very Low Junction-to-Case Thermal Resistance
UL pending
Benefits
M
MTP
Bulletin I27195 06/06
Document Number: 93911
www.vishay.com
1
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