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參數(shù)資料
| 型號(hào)： | 26B01 |
| 英文描述： | LOW SKEW, 1-TO-2 DIFFERENTIAL-TO-LVCMOS/LVTTL FANOUT BUFFER |
| 中文描述： | 低偏移，1至2 DIFFERENTIAL-TO-LVCMOS/LVTTL扇出緩沖器 |
| 文件頁數(shù)： | 3/14頁 |
| 文件大小： | 240K |
| 代理商： | 26B01 |
83026BMI-01
www.icst.com/products/hiperclocks.html
REV. A JANUARY 16, 2006
3
Integrated
Circuit
Systems, Inc.
ICS83026I-01
L
OW
S
KEW
, 1-
TO
-2
D
IFFERENTIAL
-
TO
-LVCMOS/LVTTL F
ANOUT
B
UFFER
T
ABLE
3A. P
OWER
S
UPPLY
DC C
HARACTERISTICS
,
V
DD
= 3.3V ± 5%, V
DDO
= 1.71V
TO
3.465V, T
A
= -40°C
TO
85°C
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ABLE
3B. LVCMOS / LVTTL DC C
HARACTERISTICS
,
V
DD
= 3.3V ± 5%, V
DDO
= 2.375V
TO
3.465V, T
A
= -40°C
TO
85°C
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A
BSOLUTE
M
AXIMUM
R
ATINGS
Supply Voltage, V
DD
4.6V
Inputs, V
I
-0.5V to V
DD
+ 0.5 V
Outputs, V
O
-0.5V to V
DDO
+ 0.5V
Package Thermal Impedance,
θ
JA
8 Lead SOIC
112.7°C/W (0 lfpm)
8 Lead TSSOP
101.7°C/W (0 lfpm)
Storage Temperature, T
STG
-65°C to 150°C
NOTE: Stresses beyond those listed under Absolute
Maximum Ratings may cause permanent damage to the
device. These ratings are stress specifications only. Functional
operation of product at these conditions or any conditions be-
yond those listed in the
DC Characteristics
or
AC Character-
istics
is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect product reliability.
T
ABLE
3C. LVCMOS / LVTTL DC C
HARACTERISTICS
,
V
DD
= 3.3V ± 5%, V
DDO
= 1.8V ± 5%, T
A
= -40°C
TO
85°C
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