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參數(shù)資料
| 型號(hào)： | 26MB160 |
| 廠商： | International Rectifier |
| 英文描述： | SINGLE PHASE BRIDGE Power Modules |
| 中文描述： | 單相橋式電源模塊 |
| 文件頁數(shù)： | 2/6頁 |
| 文件大小： | 46K |
| 代理商： | 26MB160 |
MB High Voltage Series
Bulletin I27177 03/03
2
www.irf.com
T
J
T
stg
R
thJC
Max. thermal resistance junction to case
R
thCS
Max. thermal resistance, case to heatsink
wt
Approximate weight
T
Mounting Torque
±
10%
Junction temperature range
- 55 to 150
o
C
Storage temperature range
- 55 to 150
o
C
1.7
1.35
K/W
Per bridge
0.2
K/W
Mounting surface , smooth, flat and greased
20
2.0
g
Nm
Bridge to heatsink
Thermal and Mechanical Specifications
Voltage
Code
V
RRM
, maximum repetitive
peak reverse voltage
V
V
RSM
, maximum non-
repetitive peak rev. voltage
V
I
RRM
max.
@ T
max.
mA
Type number
26MB..A
36MB..A
140
160
1400
1600
1500
1700
2
ELECTRICAL SPECIFICATIONS
Voltage Ratings
Parameters
26MB-A
36MB-A Units Conditions
I
O
Maximum DC output current
25
20
65
400
420
335
350
790
35
28
60
475
500
400
420
1130
A
A
°C
A
Resistive or inductive load
Capacitive load
@ Case temperature
Maximum peak, one-cycle
non-repetitive forward current
I
FSM
t = 10ms
t = 8.3ms
t = 10ms
t = 8.3ms
t = 10ms
No voltage
reapplied
100% V
RRM
reapplied
No voltage
Initial T
J
= T
J
max.
I
2
t
Maximum I
2
t for fusing
A
2
s
725
560
512
1030
800
730
t = 8.3ms
t = 10ms
t = 8.3ms
reapplied
100% V
RRM
reapplied
I
2
√
t
Maximum I
2
√
t for fusing
5.6
11.3
KA
2
√
s I
2
t for time t
= I
2
√
t x
√
t
x
;
0.1
≤
t
x
≤
10ms, V
RRM
= 0V
V
(16.7% x
π
x I
F(AV)
< I <
π
x I
F(AV)
), @ T
J
max.
(I >
π
x I
F(AV)
), @ T
J
max.
m
(16.7% x
π
x I
F(AV)
< I <
π
x I
F(AV)
), @ T
J
max.
(I >
π
x I
F(AV)
), @ T
J
max.
V
T
J
= 25
o
C, I
FM
= 40A
PK
(26MB)
T
J
= 25
o
C, I
FM
= 55A
PK
(36MB)
μ
A
T
J
= 25
o
C, per diode at V
RRM
V
f = 50 Hz, t = 1s
V
F(TO)1
V
F(TO)2
r
t1
r
t2
V
FM
Low-level of threshold voltage
0.70
0.74
High-level of threshold voltage
0.75
0.79
Low-level forward slope resistance
7.0
5.5
High-level forward slope resistance
6.4
5.2
Maximum forward voltage drop
1.25
1.3
I
RRM
V
INS
Max. DC reverse current
10
10
RMS isolation voltage base plate
2700
2700
Forward Conduction
Parameters
26MB-A
36MB-A Units Conditions
tp = 400
μ
s
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