參數(shù)資料
型號(hào)： 26N90
廠商： IXYS Corporation
英文描述： HiPerFET Power MOSFETs
中文描述： HiPerFET功率MOSFET
文件頁(yè)數(shù)： 2/4頁(yè)
文件大?。?/td> 124K
代理商： 26N90
2 - 4
2000 IXYS All rights reserved
Symbol
Test Conditions
Characteristic Values
(T
J
= 25 C, unless otherwise specified)
min.
typ.
max.
g
fs
V
DS
= 10 V; I
D
= 0.5 I
D25
Note 1
18
28
S
C
iss
C
oss
C
rss
8.7
800
300
10.8
1000
375
nF
pF
pF
V
GS
= 0 V, V
DS
= 25 V, f = 1 MHz
t
d(on)
t
r
t
d(off)
t
f
60
35
ns
ns
ns
ns
V
GS
= 10 V, V
DS
= 0.5 V
DSS
, I
D
= 0.5 I
D25
R
G
= 1
(External),
130
24
Q
g(on)
Q
gs
Q
gd
240
56
107
nC
nC
nC
V
GS
= 10 V, V
DS
= 0.5 V
DSS
, I
D
= 0.5 I
D25
R
thJC
R
thCK
0.22 K/W
0.15
K/W
Source-Drain Diode
Characteristic Values
(T
J
= 25 C, unless otherwise specified)
min.
Symbol
Test Conditions
typ.
max.
I
S
V
GS
= 0 V
26N90
25N90
26
25
A
I
SM
Repetitive;
pulse width limited by T
JM
26N90
25N90
104
100
A
V
SD
I
F
= I
S
, V
GS
= 0 V, Note 1
1.5
V
t
rr
250
ns
Q
RM
1.4
C
I
RM
10
A
I
F
= I
S
, -di/dt = 100 A/ s, V
R
= 100 V
Note: 1. Pulse test, t 300 s, duty cycle d 2 %
IXFK 25N90 IXFX 25N90
IXFK 26N90 IXFX 26N90
PLUS247
TM
(IXFX) Outline
Dim.
Millimeter
Min.
4.83
2.29
1.91
1.14
1.91
2.92
0.61
20.80
15.75
e 5.45 BSC
L
19.81
L1
3.81
Q
5.59
R
4.32
Inches
Min. Max.
.190 .205
.090 .100
.075 .085
.045 .055
.075 .084
.115 .123
.024 .031
.819 .840
.620 .635
.215 BSC
.780 .800
.150 .170
.220 .244
.170 .190
Max.
5.21
2.54
2.16
1.40
2.13
3.12
0.80
21.34
16.13
A
A
1
A
2
b
b
1
b
2
C
D
E
20.32
4.32
6.20
4.83
Millimeter
Min.
4.82
2.54
2.00
1.12
2.39
2.90
0.53
25.91
19.81
5.46 BSC
0.00
0.00
20.32
2.29
3.17
6.07
8.38
3.81
1.78
6.04
1.57
Inches
Max.
5.13
2.89
2.10
1.42
2.69
3.09
0.83
26.16
19.96
Min.
.190
.100
.079
.044
.094
.114
.021
1.020
.780
Max.
.202
.114
.083
.056
.106
.122
.033
1.030
.786
A
A1
A2
b
b1
b2
c
D
E
e
J
K
L
L1
P
Q
Q1
R
R1
S
T
.215 BSC
.000
.000
.800
.090
.125
.239
.330
.150
.070
.238
.062
0.25
0.25
20.83
2.59
3.66
6.27
8.69
4.32
2.29
6.30
1.83
.010
.010
.820
.102
.144
.247
.342
.170
.090
.248
.072
Dim.
TO-264 AA (IXFK) Outline
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,881,106
5,017,508
4,850,072
4,931,844
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,486,715
5,381,025
相關(guān)PDF資料
PDF描述
27-21SYGC Chip LEDs with Right Angle Lens
27C010TRT2FI-12 LED 589NM CYLINDER YELLOW 5MM
27C010TRT1FB-15 1 Megabit (128K x 8-Bit) - OTP EPROM
27C010TRT1FB-20 1 Megabit (128K x 8-Bit) - OTP EPROM
27C010TRT1FE-12 1 Megabit (128K x 8-Bit) - OTP EPROM
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
26NABI066V3 制造商:SEMIKRON 制造商全稱:Semikron International 功能描述:Three-phase bridge rectifier
26NM60N 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-channel 600 V, 0.160 ??, 19 A PowerFLATa?￠ 8x8 HV ultra low gate charge MDmesha?￠ II Power MOSFET
26NO10 制造商:OlympicControls Corp/Amperite Co 功能描述:Electromechanical Relay SPST-NO 3A 26VDC 26VAC Through Hole
26NO10B 制造商:Olympic Controls Corporation 功能描述:
26NO10T 制造商:OlympicControls Corp/Amperite Co 功能描述:Electromechanical Relay SPST-NO 3A 26VDC 26VAC Through Hole
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。

采購(gòu)需求

(若只采購(gòu)一條型號(hào)，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購(gòu)

我的聯(lián)系方式

*
*
*