參數(shù)資料
型號: 2729-170
廠商: MICROSEMI POWER PRODUCTS GROUP
元件分類: 功率晶體管
英文描述: 170 Watts, 38 Volts, 100祍, 10% Radar 2700-2900 MHz
中文描述: S BAND, Si, NPN, RF POWER TRANSISTOR
封裝: HERMETIC SEALED, 55KS-1, 3 PIN
文件頁數(shù): 1/4頁
文件大?。?/td> 113K
代理商: 2729-170
2729-170R4
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2729-170
170 Watts, 38 Volts, 100μs, 10%
Radar 2700-2900 MHz
GENERAL DESCRIPTION
The 2729-170 is an internally matched, COMMON BASE bipolar transistor
capable of providing 170 Watts of pulsed RF output power at 100μs pulse
width, 10% duty factor across the 2700 to 2900 MHz band.
The transistor
prematch and test fixture has been optimized through the use of Pulsed
Automated Load Pull.
This hermetically solder-sealed transistor is specifically
designed for S-band radar applications. It utilizes gold metallization and emitter
ballasting to provide high reliability and supreme ruggedness.
CASE OUTLINE
55KS-1
Common Base
ABSOLUTE MAXIMUM RATINGS
Maximum Power Dissipation
Device Dissipation @ 25
°
C
1
Maximum Voltage and Current
Collector to Base Voltage (BV
ces
)
Emitter to Base Voltage (BV
ebo
)
Collector Current (I
c
)
Maximum Temperatures
Storage Temperature
Operating Junction Temperature
570 W
65 V
3.0 V
17 A
-65 to +200
°
C
+200
°
C
ELECTRICAL CHARACTERISTICS @ 25
°
C
SYMBOL CHARACTERISTICS
Power Output
P
in
Power Input
P
g
Power Gain
η
c
Collector Efficiency
VSWR
Load Mismatch Tolerance
1
TEST CONDITIONS
MIN
TYP
MAX
UNITS
P
out
F=2700-2900 MHz
V
cc
= 38 Volts
Pulse Width = 100 μs
Duty Factor = 10%
F = 2900 MHz, P
o
= 170 W
170
8.2
52
W
W
dB
%
25.7
2:1
8.6
60
FUNCTIONAL CHARACTERISTICS @ 25
°
C
BV
ebo
Iebo
BV
ces
Ices
h
FE
θ
jc
1
Emitter to Base Breakdown
Emitter to Base Leakage
Collector to Emitter Breakdown Ic = 120 mA
Collector to Emitter Leakage
DC – Current Gain
Thermal Resistance
Ie = 30 mA
Veb = 1.5 V
3.0
56
18
V
mA
V
mA
°
C/W
2
7
65
50
Vce = 36 V
Vce = 5V, Ic = 600 mA
0.30
NOTE:
Issue April 2005
1. At rated output power and pulse conditions
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