參數(shù)資料
型號(hào): 27C1610-12
廠商: Macronix International Co., Ltd.
英文描述: 16M-BIT [2M x 8/1M x 16] CMOS OTP ROM
中文描述: 1,600位[2米x 8/1M × 16]的CMOS檢察官辦公室光盤
文件頁數(shù): 5/19頁
文件大?。?/td> 329K
代理商: 27C1610-12
5
P/N:PM0593
REV. 1.4, NOV. 19, 2002
MX27C1610
READ/RESET COMMAND
The read or reset operation is initiated by writing the
read/reset command sequence into the command reg-
ister. Microprocessor read cycles retrieve array data
from the memory. The device remains enabled for reads
until the CIR contents are altered by a valid command
sequence.
The device will automatically power-up in the read/re-
set state. In this case, a command sequence is not
required to read data. Standard microprocessor read
cycles will retrieve array data. This default value en-
sures that no spurious alteration of the memory content
occurs during the power transition. Refer to the AC Read
Characteristics and Waveforms for the specific timing
parameters.
The MX27C1610 is accessed when CE and OE are low
the data stored at the memory location determined by
the address pins is asserted on the outputs. The out-
puts are put in the high impedance state whenever CE
or OE is high. This dual line control gives designers
flexibility in preventing bus contention.
Note that the read/reset command is not valid when pro-
gram is in progress.
PAGE PROGRAM
The device is set up in the programming mode when
the programming Voltage Vpp=10V is applied with
Vcc=5V, and OE=VIH.
Any attempt to write to the device without the three-
cycle command sequence will not start the internal Write
State Machine(WSM), no data will be written to the de-
vice.
After three-cycle command (see command table) se-
quence is given, a word load is performed by applying a
low pulse on the CE input with CE low and OE high.
The address is latched on the falling edge of CE The
data is latched by the rising edge of CE . Maximum of
128 bytes of data may be loaded into each page by the
same procedure as outlined in the page program sec-
tion below.
WORD-WIDE LOAD
Word loads are used to enter the 128 bytes(64 words)
of a page to be programmed or the software codes for
data protection. A word load is performed by applying a
low pulse on the CE input with CE and OE high. The
address is latched on the falling edge of CE. The data is
latched by the rising edge of CE.
PROGRAM
The device is programmed on a page basis. Once the
bytes of a page are loaded into the device, they are
simultaneously programmed during the internal pro-
gramming period. After the first data word has been
loaded into the device, successive words are entered in
the same manner. The time between word loads must
be less than 30us otherwise the load period could be
teminated. A6 to A19 specify the page address, i.e.,
the device is page-aligned on 128 bytes(64
words)boundary. The page address must be valid dur-
ing each high to low transition of CE. A0 to A5 specify
the word address withih the page. The word may be
loaded in any order; sequential loading is not required.
If a high to low transition of CE is not detected whithin
100us of the last low to high transition, the load period
will end and the internal programming period will start.
The Auto page program terminates when status on Q7
is "1" at which time the device stays at read status reg-
ister mode until the CIR contents are altered by a valid
command sequence.
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