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參數資料
| 型號： | 27C256-10ITS |
| 廠商： | Microchip Technology Inc. |
| 英文描述： | 256K (32K x 8) CMOS EPROM |
| 中文描述： | 256K（32K的× 8）的CMOS存儲器 |
| 文件頁數： | 5/12頁 |
| 文件大小： | 182K |
| 代理商： | 27C256-10ITS |
Programming Characteristics
(Notes 1, 2, 3, 4 and 5)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
t
AS
t
OES
t
VPS
t
VCS
t
DS
t
AH
t
DH
t
DF
Address Setup Time
1
m
s
OE Setup Time
1
m
s
V
PP
Setup Time
V
CC
Setup Time
Data Setup Time
1
m
s
1
m
s
1
m
s
Address Hold Time
0
m
s
Data Hold Time
1
m
s
Output Enable to Output
Float Delay
CE
e
V
IL
0
60
ns
t
PW
t
OE
I
PP
Program Pulse Width
95
100
105
m
s
Data Valid from OE
CE
e
V
IL
CE
e
V
IL
100
ns
V
PP
Supply Current
during Programming Pulse
30
mA
I
CC
T
A
V
CC
V
PP
t
FR
V
IL
V
IH
t
IN
t
OUT
V
CC
Supply Current
Temperature Ambient
50
mA
§
C
20
25
30
Power Supply Voltage
6.0
6.25
6.5
V
Programming Supply Voltage
12.5
12.75
13.0
V
Input Rise, Fall Time
5
ns
Input Low Voltage
0.0
0.45
V
Input High Voltage
2.4
4.0
V
Input Timing Reference Voltage
0.8
2.0
V
Output Timing Reference Voltage
0.8
2.0
V
Programming Waveforms
(Note 3)
TL/D/10833–5
Note 1:
National’s standard product warranty applies to devices programmed to specifications described herein.
Note 2:
V
CC
must be applied simultaneously or before V
PP
and removed simultaneously or after V
PP
. The EPROM must not be inserted into or removed from a
board with voltage applied to V
PP
or V
CC
.
Note 3:
The maximum absolute allowable voltage which may be applied to the V
PP
pin during programming is 14V. Care must be taken when switching the V
PP
supply to prevent any overshoot from exceeding this 14V maximum specification. At least a 0.1
m
F capacitor is required across V
PP
, V
CC
to GND to suppress
spurious voltage transients which may damage the device.
Note 4:
Programming and program verify are tested with the Fast Program Algorithm, at typical power supply voltages and timings.
Note 5:
During power up the PGM pin must be brought high (
t
V
IH
) either coincident with or before power is applied to V
PP
.
5
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