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參數(shù)資料
| 型號： | 27C4000-15 |
| 廠商： | Macronix International Co., Ltd. |
| 英文描述： | 4M-BIT [512K x8] CMOS EPROM |
| 中文描述： | 4分位[為512k x8]的CMOS存儲器 |
| 文件頁數(shù)： | 3/15頁 |
| 文件大?。?/td> | 990K |
| 代理商： | 27C4000-15 |
3
MX27C4000
REV. 3.8, AUG. 26, 2003
P/N: PM00192
NOTES:
1. VH = 12.0 V
±
0.5 V
2. X = Either VIH or VIL
3. A1 - A8 = A10 - A18 = VIL(For auto select)
4. See DC Programming Characteristics for VPP voltage during programming.
MODE SELECT TABLE
PINS
MODE
CE
OE
A0
A9
VPP
OUTPUTS
Read
VIL
VIL
X
X
VCC
DOUT
Output Disable
VIL
VIH
X
X
VCC
High Z
Standby (TTL)
VIH
X
X
X
VCC
High Z
Standby (CMOS)
VCC
±
0.3V
X
X
X
VCC
High Z
Program
VIL
VIH
X
X
VPP
DIN
Program Verify
VIH
VIL
X
X
VPP
DOUT
Program Inhibit
VIH
VIH
X
X
VPP
High Z
Manufacturer Code(3)
VIL
VIL
VIL
VH
VCC
C2H
Device Code(3)
VIL
VIL
VIH
VH
VCC
40H
TWO-LINE OUTPUT CONTROL FUNCTION
To accommodate multiple memory connections, a two-
line control function is provided to allow for:
1. Low memory power dissipation,
2. Assurance that output bus contention will not
occur.
It is recommended that CE be decoded and used as the
primary device-selecting function, while OE be made a
common connection to all devices in the array and
connected to the READ line from the system control bus.
This assures that all deselected memory devices are in
their low-power standby mode and that the output pins
are only active when data is desired from a particular
memory device.
SYSTEM CONSIDERATIONS
During the switch between active and standby
conditions, transient current peaks are produced on the
rising and falling edges of Chip Enable. The magnitude
of these transient current peaks is dependent on the
output capacitance loading of the device. At a minimum,
a 0.1 uF ceramic capacitor (high frequency, low inherent
inductance) should be used on each device between
VCC and GND to minimize transient effects. In addition,
to overcome the voltage drop caused by the inductive
effects of the printed circuit board traces on EPROM
arrays, a 4.7 uF bulk electrolytic capacitor should be
used between VCC and GND for each eight devices.
The location of the capacitor should be close to where
the power supply is connected to the array.
相關PDF資料 |
PDF描述 |
|---|---|
| 27C4000-90 | 4M-BIT [512K x8] CMOS EPROM |
| 27C4096-10 | 4M-BIT [512K x 8/256K x 16] CMOS EPROM |
| 27C4096-12 | 4M-BIT [512K x 8/256K x 16] CMOS EPROM |
| 27C4096-15 | 4M-BIT [512K x 8/256K x 16] CMOS EPROM |
| 27C4100-10 | 4M-BIT [512K x 8/256K x 16] CMOS EPROM |
相關代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 27C4000-90 | 制造商:MCNIX 制造商全稱:Macronix International 功能描述:4M-BIT [512K x8] CMOS EPROM |
| 27C4001 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:4 Mbit 512Kb x 8 UV EPROM and OTP EPROM |
| 27C4002 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:4 Mbit 256Kb x16 UV EPROM and OTP EPROM |
| 27C4096 | 制造商:MCNIX 制造商全稱:Macronix International 功能描述:4M-BIT [512K x 8/256K x 16] CMOS EPROM |
| 27C4096-10 | 制造商:MCNIX 制造商全稱:Macronix International 功能描述:4M-BIT [512K x 8/256K x 16] CMOS EPROM |
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