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參數(shù)資料
| 型號(hào)： | 27C4096-10 |
| 廠商： | Macronix International Co., Ltd. |
| 英文描述： | 4M-BIT [512K x 8/256K x 16] CMOS EPROM |
| 中文描述： | 4分位[為512k × 8/256K × 16]的CMOS存儲(chǔ)器 |
| 文件頁數(shù)： | 5/18頁 |
| 文件大?。?/td> | 794K |
| 代理商： | 27C4096-10 |
5
REV. 3.6, NOV. 19, 2002
P/N: PM0197
MX27C4100/27C4096
BYTE-WIDE MODE
With BYTE/VPP at GND
±
0.2V, outputs Q8-15 are tri-
stated. If Q15/A-1 = VIH, outputs Q0-7 present data bits
Q8-15. If Q15/A-1 = VIL, outputs Q0-7 present data bits
Q0-7.
STANDBY MODE
The MX27C4100/4096 has a CMOS standby mode
which reduces the maximum VCC current to 100 uA. It
is placed in CMOS standby when CE is at VCC
±
0.3 V.
The MX27C4100/4096 also has a TTL-standby mode
which reduces the maximum VCC current to 1.5 mA. It
is placed in TTL-standby when CE is at VIH. When in
standby mode, the outputs are in a high-impedance
state, independent of the OE input.
TWO-LINE OUTPUT CONTROL FUNCTION
To accommodate multiple memory connections, a two-
line control function is provided to allow for:
1. Low memory power dissipation,
2. Assurance that output bus contention will not
occur.
It is recommended that CE be decoded and used as the
primary device-selecting function, while OE be made a
common connection to all devices in the array and
connected to the READ line from the system control bus.
This assures that all deselected memory devices are in
their low-power standby mode and that the output pins
are only active when data is desired from a particular
memory device.
SYSTEM CONSIDERATIONS
During the switch between active and standby
conditions, transient current peaks are produced on the
rising and falling edges of Chip Enable. The magnitude
of these transient current peaks is dependent on the
output capacitance loading of the device. At a minimum,
a 0.1 uF ceramic capacitor (high frequency, low inherent
inductance) should be used on each device between
Vcc and GND to minimize transient effects. In addition,
to overcome the voltage drop caused by the inductive
effects of the printed circuit board traces on EPROM
arrays, a 4.7 uF bulk electrolytic capacitor should be
used between VCC and GND for each eight devices.
The location of the capacitor should be close to where
the power supply is connected to the array.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 27C4096-12 | 4M-BIT [512K x 8/256K x 16] CMOS EPROM |
| 27C4096-15 | 4M-BIT [512K x 8/256K x 16] CMOS EPROM |
| 27C4100-10 | 4M-BIT [512K x 8/256K x 16] CMOS EPROM |
| 27C4100-12 | 4M-BIT [512K x 8/256K x 16] CMOS EPROM |
| 27C4100-15 | 4M-BIT [512K x 8/256K x 16] CMOS EPROM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 27C4096-12 | 制造商:MCNIX 制造商全稱:Macronix International 功能描述:4M-BIT [512K x 8/256K x 16] CMOS EPROM |
| 27C4096-15 | 制造商:MCNIX 制造商全稱:Macronix International 功能描述:4M-BIT [512K x 8/256K x 16] CMOS EPROM |
| 27C4096-85JC | 制造商:Atmel Corporation 功能描述: |
| 27C4100 | 制造商:MCNIX 制造商全稱:Macronix International 功能描述:4M-BIT [512K x 8/256K x 16] CMOS EPROM |
| 27C4100-10 | 制造商:MCNIX 制造商全稱:Macronix International 功能描述:4M-BIT [512K x 8/256K x 16] CMOS EPROM |
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