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參數(shù)資料
| 型號： | 27C512A-90VS |
| 廠商： | Microchip Technology Inc. |
| 英文描述： | 512K (64K x 8) CMOS EPROM |
| 中文描述： | 為512k（64K的× 8）的CMOS存儲器 |
| 文件頁數(shù)： | 4/12頁 |
| 文件大?。?/td> | 69K |
| 代理商： | 27C512A-90VS |
27C512A
DS11173E-page 4
1996 Microchip Technology Inc.
TABLE 1-4:
PROGRAMMING DC CHARACTERISTICS
TABLE 1-5:
PROGRAMMING AC CHARACTERISTICS
Ambient Temperature: Tamb = 25
V
CC
= 6.5V
±
0.25V, OE/V
°
C
= 13.0V
±
5
°
C
PP
= V
H
±
0.25V
Parameter
Status
Symbol
Min.
Max.
Units
Conditions (See Note 1)
Input Voltages
Logic “1”
Logic “0”
V
V
IH
IL
2.0
-0.1
V
CC
0.8
+1
V
V
Input Leakage
—
I
LI
-10
10
μ
A
V
IN
= 0V to V
CC
Output Voltages
Logic “1”
Logic “0”
V
V
OH
OL
2.4
—
0.45
V
V
I
I
OH
OL
= -400
= 2.1 mA
μ
A
V
CC
Current, program & verify
—
I
CC
2
—
35
mA
CE = V
IL
OE/V
PP
Current, program
—
I
PP
2
—
25
mA
A9 Product Identification
—
V
ID
11.5
12.5
V
Note 1: V
CC
must be applied simultaneously or before V
the V
PP
voltage on OE/V
PP
.
PP
voltage on OE/V
PP
and removed simultaneously or after
for Program, Program Verify
and Program Inhibit Modes
AC Testing Waveform:
Ambient Temperature:
V
CC
= 6.5V
±
0.25V, OE/V
PP
= V
H
= 13.0V
±
0.25 V
V
IH
=2.4V and V
IL
=0.45V; V
OH
=2.0V; V
OL
=0.8V
25
°
C
±
5
°
C
Parameter
Symbol
Min.
Max.
Units
Remarks
Address Set-Up Time
t
AS
2
—
μ
s
Data Set-Up Time
t
DS
2
—
μ
s
Data Hold Time
t
DH
2
—
μ
s
Address Hold Time
t
AH
0
—
μ
s
Float Delay (2)
t
DF
0
130
ns
V
CC
Set-Up Time
t
VCS
2
—
μ
s
Program Pulse Width (1)
t
PW
95
105
μ
s
100
μ
s typical
CE Set-Up Time
t
CES
2
—
μ
s
OE Set-Up Time
t
OES
2
—
μ
s
OE Hold Time
t
OEH
2
—
μ
s
OE Recovery Time
t
OR
2
—
μ
s
OE /V
PP
Rise Time During Programming
t
PRT
50
—
ns
Note 1: For express algorithm, initial programming width tolerance is 100
μ
s
±
5%.
2: This parameter is only sampled and not 100% teted. Output float is defined as the point where data is no
longer driven (see timing diagram).
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