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參數(shù)資料
| 型號： | 27C8000-15 |
| 廠商： | Macronix International Co., Ltd. |
| 英文描述： | 8M-BIT [1M x8] CMOS EPROM |
| 中文描述： | 800萬位[100萬x8]的CMOS存儲器 |
| 文件頁數(shù)： | 3/15頁 |
| 文件大小： | 993K |
| 代理商： | 27C8000-15 |
3
MX27C8000
REV. 3.6, NOV. 19, 2002
P/N: PM00259
TWO-LINE OUTPUT CONTROL FUNCTION
To accommodate multiple memory connections, a two-
line control function is provided to allow for:
1. Low memory power dissipation,
2. Assurance that output bus contention will not
occur.
It is recommended that CE be decoded and used as the
primary device-selecting function, while OE be made a
common connection to all devices in the array and
connected to the READ line from the system control bus.
This assures that all deselected memory devices are in
their low-power standby mode and that the output pins
are only active when data is desired from a particular
memory device.
MODE SELECT TABLE
PINS
MODE
CE
OE/VPP
A0
A9
OUTPUTS
Read
VIL
VIL
X
X
DOUT
Output Disable
VIL
VIH
X
X
High Z
Standby (TTL)
VIH
X
X
X
High Z
Standby (CMOS)
VCC
±
0.3V
X
X
X
High Z
Program
VIL
VPP
X
X
DIN
Program Verify
VIL
VIL
X
X
DOUT
Program Inhibit
VIH
VPP
X
X
High Z
Manufacturer Code(3)
VIL
VIL
VIL
VH
C2H
Device Code(3)
VIL
VIL
VIH
VH
80H
SYSTEM CONSIDERATIONS
During the switch between active and standby
conditions, transient current peaks are produced on the
rising and falling edges of Chip Enable. The magnitude
of these transient current peaks is dependent on the
output capacitance loading of the device. At a minimum,
a 0.1 uF ceramic capacitor (high frequency, low inherent
inductance) should be used on each device between
VCC and GND to minimize transient effects. In addition,
to overcome the voltage drop caused by the inductive
effects of the printed circuit board traces on EPROM
arrays, a 4.7 uF bulk electrolytic capacitor should be
used between VCC and GND for each eight devices. The
location of the capacitor should be close to where the
power supply is connected to the array.
3. A1 - A8 = A10 - A19 = VIL(For auto select)
4. See DC Programming Characteristics for VPP voltage during
programming.
NOTES:
1. VH = 12.0 V
±
0.5 V
2. X = Either VIH or VIL
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| 27C8100-10 | 8M-BIT [1M x8/512K x16] CMOS OTP ROM |
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| 27C8100-15 | 8M-BIT [1M x8/512K x16] CMOS OTP ROM |
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相關(guān)代理商/技術(shù)參數(shù) |
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|---|---|
| 27C801 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:8 Mbit 1Mb x 8 UV EPROM and OTP EPROM |
| 27C8100-10 | 制造商:MCNIX 制造商全稱:Macronix International 功能描述:8M-BIT [1M x8/512K x16] CMOS OTP ROM |
| 27C8100-12 | 制造商:MCNIX 制造商全稱:Macronix International 功能描述:8M-BIT [1M x8/512K x16] CMOS OTP ROM |
| 27C8100-15 | 制造商:MCNIX 制造商全稱:Macronix International 功能描述:8M-BIT [1M x8/512K x16] CMOS OTP ROM |
| 27C8100-20 | 制造商:MCNIX 制造商全稱:Macronix International 功能描述:8M-BIT [1M x8/512K x16] CMOS OTP ROM |
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