參數(shù)資料
型號: 27LV002CB-70
廠商: Macronix International Co., Ltd.
英文描述: 2M-BIT [256K x 8] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY
中文描述: 200萬位[256K × 8] CMOS單電壓3V時僅閃存
文件頁數(shù): 49/58頁
文件大小: 528K
代理商: 27LV002CB-70
49
P/N:PM1204
MX29LV002C/002NC T/B
REV. 1.0, JUN. 30, 2005
MIN.
MAX.
Input Voltage with respect to GND on all pins except I/O pins
-1.0V
12.5V
Input Voltage with respect to GND on all I/O pins
-1.0V
Vcc + 1.0V
Current
-100mA
+100mA
Includes all pins except Vcc. Test conditions: Vcc = 3.0V, one pin at a time.
LIMITS
PARAMETER
MIN.
TYP.(2)
MAX.(3)
UNIT
Sector Erase Time
0.7
15
sec
Chip Erase Time
4
32
sec
Byte Programming Time
9
300
us
Chip Programming Time
4.5
13.5
sec
Erase/Program Cycles
100,000
Cycles
Table 16. LATCH-UP CHARACTERISTICS
Table 15. ERASE AND PROGRAMMING PERFORMANCE(1)
Note:
1.Not 100% Tested, Excludes external system level over head.
2.Typical values measured at 25
°
C, 3V.
3.Maximum values measured at 25
°
C, 2.7V.
Table 17. DATA RETENTION
Parameter Description
Test Conditions
Min
Unit
150
°
C
10
Years
Data Retention Time
125
°
C
20
Years
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