參數(shù)資料
型號: 28C010TRT1DS-12
廠商: MAXWELL TECHNOLOGIES
元件分類: PROM
英文描述: 1 Megabit (128K x 8-Bit) EEPROM
中文描述: 128K X 8 EEPROM 5V, 120 ns, DIP32
封裝: DIP-32
文件頁數(shù): 4/20頁
文件大小: 359K
代理商: 28C010TRT1DS-12
M
4
All data sheets are subject to change without notice
2003 Maxwell Technologies
All rights reserved.
1 Megabit (128K x 8-Bit) EEPROM
28C010T
06.03.03 REV 14
T
ABLE
7. 28C010T AC E
LECTRICAL
C
HARACTERISTICS
FOR
R
EAD
O
PERATION
1
(V
CC
= 5V + 10%, T
A
= -55
TO
+125
°
C)
S
YMBOL
1. Test conditions: Input pulse levels - 0.4V to 2.4V; input rise and fall times < 20ns; output load - 1 TTL gate + 100pF (including
scope and jig); reference levels for measuring timng - 0.8V/1.8V.
2. t
DF
and t
DFR
are defined as the time at which the output becomes an open circuit and data is no longer driven.
3. Guaranteed by design.
P
ARAMETER
S
UBGROUPS
M
IN
M
AX
U
NITS
Address Access Time
CE = OE = V
IL
, WE = V
IH
-120
-150
-200
Chip Enable Access Time
OE = V
IL
, WE = V
IH
-120
-150
-200
Output Enable Access Time
CE = V
IL
, WE = V
IH
-120
-150
-200
Output Hold to Address Change
CE = OE = V
IL
, WE = V
IH
-120
-150
-200
Output Disable to High-Z
2
CE = V
IL
, WE = V
IH
-120
-150
-200
CE = OE = V
IL
, WE = V
IH
-120
-150
-200
RES to Output Delay
3
CE = OE = V
IL
, WE = V
IH
-120
-150
-200
t
ACC
9, 10, 11
--
--
--
120
150
200
ns
t
CE
9, 10, 11
--
--
--
120
150
200
ns
t
OE
9, 10, 11
0
0
0
75
75
100
ns
t
OH
9, 10, 11
0
0
0
--
--
--
ns
t
DF
t
DFR
9, 10, 11
0
0
0
0
0
0
50
50
60
300
350
450
ns
t
RR
9, 10, 11
--
--
--
400
450
650
ns
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