參數(shù)資料
型號(hào): 28C256TRT2DB-12
廠商: MAXWELL TECHNOLOGIES
元件分類: PROM
英文描述: 256K EEPROM (32K x 8-Bit) EEPROM
中文描述: 32K X 8 EEPROM 5V, 120 ns, DIP28
封裝: DIP-28
文件頁(yè)數(shù): 4/14頁(yè)
文件大?。?/td> 283K
代理商: 28C256TRT2DB-12
M
4
All data sheets are subject to change without notice
2001 Maxwell Technologies
All rights reserved.
256K EEPROM(32K x 8-Bit) EEPROM
28C256T
02.18.02 Rev5
T
ABLE
7. 28C256T AC E
LECTRICAL
C
HARACTERISTICS
FOR
R
EAD
O
PERATION1
(V
CC
= 5V ±10%, T
A
= -55
TO
125 °C
UNLESS
OTHERWISE
SPECIFIED
)
1.
Test conditions: Input pulse levels - 0V to 3V; input rise and fall times < 20 ns; output load - 1 TTL gate + 100 pF (including scope and jig); ref-
erence levels for measuring timng - 0.8V/1.8V
.
P
ARAMETER
S
UBGROUPS
S
YMBOL
M
IN
M
AX
U
NITS
Address Access Time CE = OE = V
IL
, WE = V
IH
-120
-150
9, 10, 11
t
ACC
--
--
120
150
ns
CE to Output Delay OE = V
IL
, WE = V
IH
-120
-150
9, 10, 11
t
CE
--
--
120
150
ns
OE to Output Delay CE = V
IL
, WE = V
IH
-120
-150
9, 10, 11
t
OE
0
0
75
75
ns
Output Hold fromAddress CE = OE = V
IL
, WE = V
IH
-120
-150
9, 10, 11
t
OH
0
0
--
--
ns
OE (CE) High to Output Float CE = V
IL
, WE = V
IH
2
-120
-150
2. t
DF
and t
DFR
are defined as the time at which the output becomes an open circuit and data is no longer driven.
9, 10, 11
t
DF
0
0
50
50
ns
T
ABLE
8. 28C256T AC E
LECTRICAL
C
HARACTERISTICS
FOR
P
AGE
/B
YTE
E
RASE
AND
W
RITE
O
PERATIONS
(V
CC
= 5V ±10%, T
A
= -55
TO
125 °C
UNLESS
OTHERWISE
SPECIFIED
)
P
ARAMETER
S
UBGROUPS
S
YMBOL
M
IN1
T
YP
M
AX
U
NITS
Address Setup Time
-120
-150
t
AS
0
0
--
--
--
--
ns
9, 10, 11
9, 10, 11
CE to Write Setup Time
-120
-150
t
CS 2
0
0
--
--
--
--
ns
9, 10, 11
9, 10, 11
WE to Write Setup Time
-120
-150
t
WS 3
0
0
--
--
--
--
ns
9, 10, 11
9, 10, 11
WE Hold Time
-120
-150
9, 10, 11
t
WH 3
0
0
--
--
ns
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