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參數(shù)資料
| 型號(hào)： | 28F004BL-B |
| 英文描述： | FireWire Current Limiter and Low-Drop ORing Switch Controller |
| 中文描述： | 4 MBlT（256K × 16。為512k × 8）低功耗啟動(dòng)塊閃存系列 |
| 文件頁(yè)數(shù)： | 24/44頁(yè) |
| 文件大小： | 496K |
| 代理商： | 28F004BL-B |
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28F400BL-T/B, 28F004BL-T/B
Upon completion of reads from any block other than
the block being erased, the Erase Resume com-
mand must be issued. When the Erase Resume
command is given, the WSM will continue with the
erase sequence and complete erasing the block. As
with the end of erase, the status register must be
read, cleared, and the next instruction issued in or-
der to continue.
4.4.6 EXTENDED CYCLING
Intel has designed extended cycling capability into
its ETOX III flash memory technology. The 4-Mbit
low voltage flash memory family is designed for
10,000 program/erase cycles on each of the seven
blocks. The combination of low electric fields, clean
oxide processing and minimized oxide area per
memory cell subjected to the tunneling electric field,
results in very high cycling capability.
24
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 28F001BN-B | 1-MBIT (128K x 8) BOOT BLOCK FLASH MEMORY |
| 28F001BN-T | 1-MBIT (128K x 8) BOOT BLOCK FLASH MEMORY |
| 28F001BX-B | 1-MBIT (128K x 8) BOOT BLOCK FLASH MEMORY |
| 28F002BL-B | 2-MBIT (128K x 16. 256K x 8) LOW-POWER BOOT BLOCK FLASH MEMORY FAMILY |
| 28F002BL-T | 2-MBIT (128K x 16. 256K x 8) LOW-POWER BOOT BLOCK FLASH MEMORY FAMILY |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 28F004BL-T | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:4-MBlT (256K x 16. 512K x 8) LOW-POWER BOOT BLOCK FLASH MEMORY FAMILY |
| 28F004BV | 制造商:未知廠家 制造商全稱:未知廠家 功能描述: |
| 28F004BV-T/B | 制造商:未知廠家 制造商全稱:未知廠家 功能描述: |
| 28F004BX-B | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:4-MBIT (256K X 16. 512K X 8) BOOT BLOCK FLASH MEMORY FAMILY |
| 28F004BX-T | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:4-MBIT (256K X 16. 512K X 8) BOOT BLOCK FLASH MEMORY FAMILY |
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