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參數(shù)資料
| 型號： | 28F016SC |
| 英文描述： | Evaluation Kit/Evaluation System for the MAX5954L/MAX5954A |
| 中文描述： | 28F016SC -字節(jié)寬SmartVoltage FlashFile Memory系列4。 8。及16兆比特 |
| 文件頁數(shù)： | 20/59頁 |
| 文件大?。?/td> | 384K |
| 代理商： | 28F016SC |
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3 VOLT ADVANCED+ BOOT BLOCK
E
20
PRODUCT PREVIEW
3.3.5
READING A BLOCK’S LOCK STATUS
The lock status of every block can be read in the
Configuration Read mode of the device. To enter
this mode, write 90H to the device. Subsequent
reads at Block Address + 00002 will output the lock
status of that block. The lock status is represented
by the lowest two output pins, DQ
0
and DQ
1
. DQ
0
indicates the Block Lock/Unlock status and is set by
the Lock command and cleared by the Unlock
command. It is also automatically set when entering
Lock-Down. DQ
1
indicates Lock-Down status and is
set by the Lock-Down command. It cannot be
cleared by software, only by device reset or power-
down.
Table 8. Block Lock Status
Item
Address
Data
Block Lock Configuration
XX002
LOCK
Block Is Unlocked
DQ
0
= 0
Block Is Locked
DQ
0
= 1
Block Is Locked-Down
DQ
1
= 1
3.3.6
LOCKING OPERATIONS DURING
ERASE SUSPEND
Changes to block lock status can be performed
during an erase suspend by using the standard
locking command sequences to unlock, lock, or
lock-down a block. This is useful in the case when
another block needs to be updated while an erase
operation is in progress.
To change block locking during an erase operation,
first write the erase suspend command (B0H), then
check the status register until it indicates that the
erase operation has been suspended. Next write
the desired lock command sequence to a block and
the lock status will be changed. After completing
any desired lock, read, or program operations,
resume the erase operation with the Erase Resume
command (D0H).
If a block is locked or locked-down during a
suspended erase of the same block, the locking
status bits will be changed immediately, but when
the erase is resumed, the erase operation will
complete.
Locking operations cannot be performed during a
program suspend. Refer to Appendix A for detailed
information on which commands are valid during
erase suspend.
3.3.7
STATUS REGISTER ERROR
CHECKING
Using nested locking or program command
sequences during erase suspend can introduce
ambiguity into status register results.
Since locking changes are performed using a two
cycle command sequence, e.g., 60H followed by
01H to lock a block, following the Configuration
Setup command (60H) with an invalid command will
produce a lock command error (SR.4 and SR.5 will
be set to 1) in the status register. If a lock
command error occurs during an erase suspend,
SR.4 and SR.5 will be set to 1, and will remain at 1
after the erase is resumed. When erase is
complete, any possible error during the erase
cannot be detected via the status register because
of the previous locking command error.
A similar situation happens if an error occurs during
a program operation error nested within an erase
suspend.
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PDF描述 |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 28F016SV | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:16-MBIT (1 MBIT x 16, 2 MBIT x 8) FlashFile MEMORY |
| 28F016XD | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:16-MBIT (1 MBIT x 16) DRAM-INTERFACE FLASH MEMORY |
| 28F016XS | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:16-MBIT (1 MBIT x 16, 2 MBIT x 8) SYNCHRONOUS FLASH MEMORY |
| 28F0181-1SR-10 | 功能描述:電磁干擾濾波珠子、扼流圈和陣列 115ohms 100MHz 10A Broad Band Frequency RoHS:否 制造商:AVX 阻抗: 最大直流電流:35 mA 最大直流電阻: 容差: 端接類型:SMD/SMT 電壓額定值:25 V 工作溫度范圍:- 25 C to + 85 C 封裝 / 箱體:0603 (1608 metric) |
| 28F020 | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:28F020 2048K (256K X 8) CMOS FLASH MEMORY |
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