參數(shù)資料
型號: 28F160S3
廠商: Intel Corp.
英文描述: 3 V FlashFile Memory(3 V FlashFile 存儲器)
中文描述: 3伏FlashFile內(nèi)存(3伏FlashFile存儲器)
文件頁數(shù): 40/53頁
文件大小: 331K
代理商: 28F160S3
28F160S3/28F320S3
E
40
PRELIMINARY
6.3
T
A
= +25°C, f = 1 MHz
Capacitance
(1)
Symbol
Parameter
Typ
Max
Unit
Condition
C
IN
Input Capacitance
6
8
pF
V
IN
= 0.0 V
C
OUT
Output Capacitance
8
12
pF
V
OUT
= 0.0 V
NOTE:
1.
Sampled, not 100% tested.
6.4
DC Characteristics
T
A
=
–40 °C to +85 °C (Extended) and T
A
= 0 °C to +70 °C (Commercial)
Sym
Parameter
Notes
Typ
Max
Unit
Conditions
I
LI
Input Load Current
1
±
0.5
μ
A
V
CC
= V
CC1/2
Max
V
IN
= V
CC1/2
or GND
I
LO
Output Leakage Current
1
±
0.5
μ
A
V
CC
= V
CC1/2
Max
V
out
= V
CC1/2
or GND
I
CCS
V
CC
Standby Current
1,3,7
20
100
μ
A
CMOS Inputs
V
CC
= V
CC1/2
Max
CE
X
# = RP# = V
CC
± 0.2 V
1
4
mA
TTL Inputs
V
CC
= V
CC1/2
Max
CE
X
# = RP# = V
IH
I
CCD
V
CC
Deep Power-Down
Current
16-Mb Commercial
Temperature
1
15
μ
A
RP# = GND ± 0.2 V
I
OUT
(RY/BY#) = 0 mA
16-Mb Extended
Temperature
1
20
μ
A
RP# = GND ± 0.2 V
I
OUT
(RY/BY#) = 0 mA
32-Mb Commercial
Temperature
1
20
μ
A
RP# = GND ± 0.2 V
I
OUT
(RY/BY#) = 0 mA
32-Mb Extended
Temperature
1
TBD
μ
A
RP# = GND ± 0.2 V
I
OUT
(RY/BY#) = 0 mA
I
CCR
V
CC
Read Current
1,6,7
25
mA
CMOS Inputs
V
CC
= V
CC1/2
Max
CE
X
# = GND
f = 5 MHz, I
OUT
= 0 mA
30
mA
TTL Inputs
V
CC
= V
CC1/2
Max
CE
X
# = V
IL
f = 5 MHz, I
OUT
= 0 mA
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