參數(shù)資料
型號: 28F320S3
廠商: Intel Corp.
英文描述: 3 V、32MB FlashFile Memory(3 V、32M位FlashFile 存儲器)
中文描述: 3伏,32MB的FlashFile內(nèi)存(3伏,32位FlashFile存儲器)
文件頁數(shù): 45/53頁
文件大?。?/td> 331K
代理商: 28F320S3
E
6.5
28F160S3/28F320S3
45
PRELIMINARY
AC Characteristics
—Read-Only Operations
(1, 5)
T
A
=
–40
o
C to +85
o
C (Extended) and T
A
= 0 °C to +70 °C (Commercial)
Versions
(4)
3.3V ± 0.3V V
CC
16Mb/32Mb
-75/-110
16Mb/32Mb
-130/-140
(All units in ns unless otherwise noted)
2.7V - 3.6V V
16Mb/32Mb
-100/-130
16Mb/32Mb
-150/-160
#
Sym
Parameter
Notes Min
Max
Min
Max
Min
Max
Min
Max
R1 t
AVAV
Read/Write Cycle Time
16 Mbit
1
100
100
130
150
32 Mbit
1
110
130
140
160
R2 t
AVQV
Address to Output Delay
16 Mbit
1
75
100
130
150
32 Mbit
1
110
130
140
160
R3 t
ELQV
CE
X
# to Output Delay
16 Mbit
2
75
100
130
150
32 Mbit
2
110
130
140
160
R4 t
GLQV
OE# to Output Delay
2
45
50
50
55
R5 t
PHQV
RP# High to Output Delay
600
600
600
600
R6 t
ELQX
CE
X
# to Output in Low Z
3
0
0
0
0
R7 t
GLQX
OE# to Output in Low Z
3
0
0
0
0
R8 t
EHQZ
CE
X
# High to Output in High Z
3
50
50
55
55
R9 t
GHQZ
OE# High to Output in High Z
3
20
20
25
25
R10 t
OH
Output Hold from Address, CE
X
#, or
OE# Change, Whichever Occurs First
3
0
0
0
0
R11 t
ELFL
t
ELFH
CE
X
# Low to BYTE# High or Low
3
5
5
5
5
R12 t
FLQV
t
FHQV
BYTE# to Output Delay
16 Mbit
3
100
120
130
150
32 Mbit
3
110
130
140
160
R13 t
FLQZ
BYTE# to Output in High Z
3
30
30
40
40
NOTES:
1.
2.
3.
4.
5.
See AC Input/Output Reference Waveform for maximum allowable input slew rate.
OE# may be delayed up to t
ELQV
-t
GLQV
after the falling edge of CE
X
# without impact on t
ELQV
.
Sampled, not 100% tested.
See Ordering Informationfor device speeds (valid operational combinations).
See Figures 14 through 16 for testing characteristics.
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