A29400 Series
512K X 8 Bit / 256K X 16 Bit CMOS 5.0 Volt-only,
Boot Sector Flash Memory
Preliminary
Features
n
5.0V
±
10% for read and write operations
n
Access times:
- 55/70/90 (max.)
n
Current:
- 20 mA typical active read current
- 30 mA typical program/erase current
- 1
μ
A typical CMOS standby
n
Flexible sector architecture
-
16 Kbyte/ 8 KbyteX2/ 32 Kbyte/ 64 KbyteX7 sectors
-
8 Kword/ 4 KwordX2/ 16 Kword/ 32 KwordX7 sectors
-
Any combination of sectors can be erased
-
Supports full chip erase
-
Sector protection:
A hardware method of protecting sectors to prevent
any inadvertent program or erase operations within
that sector
n
Top or bottom boot block configurations available
n
Embedded Erase Algorithms
- Embedded Erase algorithm will automatically erase
the entire chip or any combination of designated
sectors and verify the erased sectors
- Embedded Program algorithm automatically writes
and verifies bytes at specified addresses
PRELIMINARY (February, 2001, Version 0.1)
1
AMIC Technology, Inc.
n
Typical 100,000 program/erase cycles per sector
n
20-year data retention at 125
°
C
- Reliable operation for the life of the system
n
Compatible with JEDEC-standards
- Pinout and software compatible with single-power-
supply Flash memory standard
-
Superior inadvertent write protection
n
Data
Polling and toggle bits
-
Provides a software method of detecting completion
of program or erase operations
n
Erase Suspend/Erase Resume
-
Suspends a sector erase operation to read data from,
or program data to, a non-erasing sector, then
resumes the erase operation
n
Hardware reset pin (
RESET
)
-
Hardware method to reset the device to reading array
data
n
Package options
-
44-pin SOP or 48-pin TSOP (I)
General Description
The A29400 is a 5.0 volt only Flash memory organized as
524,288 bytes of 8 bits or 262,144 words of 16 bits each. The
A29400 offers the
RESET
function. The 512 Kbytes of data
are further divided into eleven sectors for flexible sector erase
capability. The 8 bits of data appear on I/O
0
- I/O
7
while the
addresses are input on A1 to A17; the 16 bits of data appear
on I/O
0
~I/O
15
. The A29400 is offered in 44-pin SOP and 48-Pin
TSOP packages. This device is designed to be programmed in-
system with the standard system 5.0 volt VCC supply.
Additional 12.0 volt VPP is not required for in-system write or
erase operations. However, the A29400 can also be
programmed in standard EPROM programmers.
The A29400 has the first toggle bit, I/O
6
, which indicates
whether an Embedded Program or Erase is in progress, or it is
in the Erase Suspend. Besides the I/O
6
toggle bit, the A29400
has a second toggle bit, I/O
2
, to indicate whether the addressed
sector is being selected for erase. The A29400 also offers the
ability to program in the Erase Suspend mode. The standard
A29400 offers access times of 55, 70 and 90 ns, allowing high-
speed microprocessors to operate without wait states. To
eliminate bus contention the device has separate chip enable
(
CE
), write enable (
WE
) and output enable (
OE
) controls.
The device requires only a single 5.0 volt power supply for both
read and write functions. Internally generated and regulated
voltages are provided for the program and erase operations.
The A29400 is entirely software command set compatible with
the JEDEC single-power-supply Flash standard. Commands are
written to the command register using standard microprocessor
write timings. Register contents serve as input to an internal
state-machine that controls the erase and programming circuitry.
Write cycles also internally latch addresses and data needed for
the programming and erase operations. Reading data out of the
device is similar to reading from other Flash or EPROM devices.
Device programming occurs by writing the proper program
command sequence. This initiates the Embedded Program
algorithm - an internal algorithm that automatically times the
program pulse widths and verifies proper program margin.
Device erasure occurs by executing the proper erase command
sequence. This initiates the Embedded Erase algorithm - an
internal algorithm that automatically preprograms the array (if it is
not already programmed) before executing the erase operation.
During erase, the device automatically times the erase pulse
widths and verifies proper erase margin.