參數(shù)資料
型號(hào): 29F002T-55
廠商: Macronix International Co., Ltd.
英文描述: 2M-BIT [256K x 8] CMOS FLASH MEMORY
中文描述: 200萬位[256K × 8]的CMOS閃存
文件頁(yè)數(shù): 20/51頁(yè)
文件大小: 622K
代理商: 29F002T-55
20
REV. 1.5, MAR. 28, 2005
P/N: PM0547
MX29F002/002N T/B
AC CHARACTERISTICS
29F002T/B-55(NOTE 2)
MIN.
MAX.
SYMBOL
PARAMETER
UNIT
tOES
OE setup time
0
ns
tCWC
Command programming cycle
70
ns
tCEP
WE programming pulse width
45
ns
tCEPH1
WE programming pulse width High
20
ns
tCEPH2
WE programming pulse width High
20
ns
tAS
Address setup time
0
ns
tAH
Address hold time
45
ns
tDS
Data setup time
20
ns
tDH
Data hold time
0
ns
tCESC
CE setup time before command write
0
ns
tDF
Output disable time (Note 1)
20
ns
tAETC
Total erase time in auto chip erase
3(TYP.)
24
s
tAETB
Total erase time in auto sector erase
1(TYP.)
8
s
tAVT
Total programming time in auto verify
7
210
us
(Byte Program time)
tBAL
Sector address load time
100
us
tCH
CE Hold Time
0
ns
tCS
CE setup to WE going low
0
ns
tVLHT
Voltage Transition Time
4
us
tOESP
OE Setup Time to WE Active
4
us
tWPP1
Write pulse width for sector protect
10
us
tWPP2
Write pulse width for sector unprotect
12
ms
NOTES:
1. tDF defined as the time at which the output achieves the open circuit condition and data is no longer driven.
2. The test conditin of MX29F002T/B-55 : VCC=5V
±
5%,CL=50pf,VIH/VIL=3.0V/0V
VOH/VOL=1.5V/1.5V,IOL=2mA,IOH=-2mA
TA= 0
o
C TO 70
o
C
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