參數(shù)資料
型號: 29F002T-70
廠商: Macronix International Co., Ltd.
英文描述: 2M-BIT [256K x 8] CMOS FLASH MEMORY
中文描述: 200萬位[256K × 8]的CMOS閃存
文件頁數(shù): 27/51頁
文件大小: 622K
代理商: 29F002T-70
27
REV. 1.5, MAR. 28, 2005
P/N: PM0547
MX29F002/002N T/B
All data in chip are erased. External erase verify is not
required because data is erased automatically by internal
control circuit. Erasure completion can be verified by
DATA polling and toggle bit checking after automatic erase
starts. Device outputs 0 during erasure and 1 after erasure
on Q7.(Q6 is for toggle bit; see toggle bit, DATA polling,
timing waveform)
AUTOMATIC CHIP ERASE TIMING WAVEFORM
AUTOMATIC CHIPE RASETIMING WAVEFORM
tCWC
tAS
tCEP
tDS tDH
Vcc 5V
CE
OE
Q0,Q1,
Q4(Note 1)
WE
A11~A17
tCEPH1
tAH
Q7
Command In
A0~A10
Command In
Command In
Command In
Command In
Command In
tAETC
DATA polling
2AAH
555H
555H
Command #AAH
(Q0~Q7)
Command #55H
Command #80H
Notes:
(1). Q6:Toggle bit, Q5:Timing-limit bit, Q3: Time-out bit, Q2: Toggle bit
555H
2AAH
555H
Command In
Command In
Command #AAH
Command In
Command In
Command #55H
Command In
Command In
Command #10H
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