- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄371438 > 29F004T-90 (Macronix International Co., Ltd.) 4M-BIT [512KX8] CMOS FLASH MEMORY PDF資料下載
參數(shù)資料
| 型號： | 29F004T-90 |
| 廠商： | Macronix International Co., Ltd. |
| 英文描述： | 4M-BIT [512KX8] CMOS FLASH MEMORY |
| 中文描述： | 4分位[512KX8]的CMOS閃存 |
| 文件頁數(shù)： | 15/39頁 |
| 文件大?。?/td> | 599K |
| 代理商： | 29F004T-90 |
第1頁第2頁第3頁第4頁第5頁第6頁第7頁第8頁第9頁第10頁第11頁第12頁第13頁第14頁當(dāng)前第15頁第16頁第17頁第18頁第19頁第20頁第21頁第22頁第23頁第24頁第25頁第26頁第27頁第28頁第29頁第30頁第31頁第32頁第33頁第34頁第35頁第36頁第37頁第38頁第39頁
15
MX29F004T/B
P/N:PM0554
REV. 1.9, OCT. 19, 2004
ABSOLUTE MAXIMUM RATINGS
RATING
Ambient Operating Temperature
Storage Temperature
Applied Input Voltage
Applied Output Voltage
VCC to Ground Potential
A9 & OE
VALUE
0
o
C to 70
o
C
-65
o
C to 125
o
C
-0.5V to 7.0V
-0.5V to 7.0V
-0.5V to 7.0V
-0.5V to 13.5V
NOTICE:
Stresses greater than those listed under ABSOLUTE
MAXIMUM RATINGS may cause permanent damage to
the device. This is a stress rating only and functional
operational sections of this specification is not implied.
Exposure to absolute maximum rating conditions for
extended period may affect reliability.
NOTICE:
Specifications contained within the following tables are
subject to change.
READ TIMING WAVEFORMS
Addresses
CE
OE
tACC
WE
VIH
VIL
VIH
VIL
VIH
VIL
VIH
VIL
VOH
VOL
HIGH Z
HIGH Z
DATA Valid
tOE
tDF
tCE
Outputs
tOH
ADD Valid
NOTES:
1. VIL min. = -0.6V for pulse width is equal to or less than 20ns.
2. If VIH is over the specified maximum value, programming
operation cannot be guaranteed.
3. ICCES is specified with the device de-selected. If the
device is read during erase suspend mode, current draw
is the sum of ICCES and ICC1 or ICC2.
4. All current are in RMS unless otherwise noted.
DC CHARACTERISTICS (TA = 0
o
C to 70
o
C, VCC = 5V
±
10%)
SYMBOL
ICC1 (Read)
ICC2
ICC3 (Program)
ICC4 (Erase)
ICCES
PARAMETER
Operating VCC Current
MIN.
TYP
MAX.
30
50
50
50
UNIT
mA
mA
mA
mA
mA
CONDITIONS
IOUT=0mA, f=5MHz
IOUT=0mA, f=10MHz
In Programming
In Erase
CE=VIH, Erase Suspended
VCC Erase Suspend Current
2
COMMAND PROGRAMMING/DATA PROGRAMMING/ERASE OPERATION
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 29F016-12 | 16M-BIT [2M X 8] CMOS EQUAL SECTOR FLASH MEMORY |
| 29F016-90 | 16M-BIT [2M X 8] CMOS EQUAL SECTOR FLASH MEMORY |
| 29F022B-12 | 2M-BIT[256K x 8]CMOS FLASH MEMORY |
| 29F022B-120 | 2M-BIT[256K x 8]CMOS FLASH MEMORY |
| 29F022B-55 | 2M-BIT[256K x 8]CMOS FLASH MEMORY |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 29F010 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:1 Mbit 128Kb x8, Uniform Block Single Supply Flash Memory |
| 29F01045JC | 制造商: 功能描述: 制造商:Advanced Micro Devices 功能描述: 制造商:undefined 功能描述: |
| 29F010-45JC | 制造商: 功能描述: 制造商:undefined 功能描述: |
| 29F010B55EI | 制造商: 功能描述: 制造商:Advanced Micro Devices 功能描述: |
| 29F010B-55EI | 制造商: 功能描述: |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。