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參數(shù)資料
| 型號： | 29F010 |
| 廠商： | Advanced Micro Devices, Inc. |
| 英文描述： | 1 Megabit (128 K x 8-bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory |
| 中文描述： | 1兆位（128畝× 8位）的CMOS 5.0伏只，統(tǒng)一部門快閃記憶體 |
| 文件頁數(shù)： | 1/20頁 |
| 文件大?。?/td> | 402K |
| 代理商： | 29F010 |
1/20
September 2005
M29F010B
1 Mbit (128Kb x8, Uniform Block) Single Supply Flash Memory
■
SINGLE 5V±10% SUPPLY VOLTAGE for
PROGRAM, ERASE and READ OPERATIONS
■
ACCESS TIME: 45 ns
■
PROGRAMMING TIME
– 8 μs per Byte typical
■
8 UNIFORM 16 KBytes MEMORY BLOCKS
■
PROGRAM/ERASE CONTROLLER
– Embedded Byte Program algorithm
– Embedded Multi-Block/Chip Erase algorithm
– Status Register Polling and Toggle Bits
■
ERASE SUSPEND and RESUME MODES
– Read and Program another Block during
Erase Suspend
■
UNLOCK BYPASS PROGRAM COMMAND
– Faster Production/Batch Programming
■
LOW POWER CONSUMPTION
– Standby and Automatic Standby
■
100,000 PROGRAM/ERASE CYCLES per
BLOCK
■
20 YEARS DATA RETENTION
– Defectivity below 1 ppm/year
■
ELECTRONIC SIGNATURE
– Manufacturer Code: 20h
– Device Code: 20h
■
ECOPACK
PACKAGES AVAILABLE
TSOP32 (N)
8 x 20mm
PLCC32 (K)
Figure 1. Logic Diagram
AI02735
17
A0-A16
W
DQ0-DQ7
VCC
M29F010B
E
VSS
8
G
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