參數(shù)資料
型號: 29F022B-12
廠商: Macronix International Co., Ltd.
英文描述: 2M-BIT[256K x 8]CMOS FLASH MEMORY
中文描述: 200萬位[256K × 8]的CMOS閃存
文件頁數(shù): 17/46頁
文件大小: 606K
代理商: 29F022B-12
17
P/N:PM0556
REV. 1.3, NOV. 11, 2002
MX29F022/022NT/B
CAPACITANCE TA = 25
o
C, f = 1.0 MHz
SYMBOL
CIN1
CIN2
COUT
PARAMETER
Input Capacitance
Control Pin Capacitance
Output Capacitance
MIN.
TYP
MAX.
8
12
12
UNIT
pF
pF
pF
CONDITIONS
VIN = 0V
VIN = 0V
VOUT = 0V
READ OPERATION
DC CHARACTERISTICS
TA = 0
o
C TO 70
o
C, VCC = 5V
±
10% (VCC=5V
±
5% for 29F022/022N-55)
SYMBOL
ILI
ILO
ISB1
ISB2
ICC1
ICC2
VIL
VIH
VOL
VOH1
VOH2
PARAMETER
Input Leakage Current
Output Leakage Current
Standby VCC current
MIN.
TYP
MAX.
1
10
1
5
30
50
0.8
VCC + 0.3
0.45
UNIT
mA
mA
mA
uA
mA
mA
V
V
V
V
V
CONDITIONS
VIN = GND to VCC
VOUT = GND to VCC
CE = VIH
CE = VCC + 0.3V
IOUT = 0mA, f=5MHz
IOUT = 0mA, f=10MHz
1
Operating VCC current
Input Low Voltage
Input High Voltage
Output Low Voltage
Output High Voltage(TTL)
Output High Voltage(CMOS)VCC-0.4
-0.3(NOTE1)
2.0
IOL = 2.1mA
IOH =-2mA
IOH =-100uA,VCC=VCC
MIN
2.4
NOTES:
1.VIL min. = -1.0V for pulse width is equal to or less than 50 ns.
VIL min. = -2.0V for pulse width is equal to or less than 20 ns.
2.VIH max. = VCC + 1.5V for pulse width is equal to or less than 20 ns
If VIH is over the specified maximum value, read operation cannot be guaranteed.
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
29F022B-120 制造商:MCNIX 制造商全稱:Macronix International 功能描述:2M-BIT[256K x 8]CMOS FLASH MEMORY
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29F022B-90 制造商:MCNIX 制造商全稱:Macronix International 功能描述:2M-BIT[256K x 8]CMOS FLASH MEMORY
29F022T-12 制造商:MCNIX 制造商全稱:Macronix International 功能描述:2M-BIT[256K x 8]CMOS FLASH MEMORY