- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄371438 > 29F022B-70 (Macronix International Co., Ltd.) 2M-BIT[256K x 8]CMOS FLASH MEMORY PDF資料下載
參數(shù)資料
| 型號： | 29F022B-70 |
| 廠商： | Macronix International Co., Ltd. |
| 英文描述： | 2M-BIT[256K x 8]CMOS FLASH MEMORY |
| 中文描述： | 200萬位[256K × 8]的CMOS閃存 |
| 文件頁數(shù)： | 4/46頁 |
| 文件大?。?/td> | 606K |
| 代理商： | 29F022B-70 |
第1頁第2頁第3頁當(dāng)前第4頁第5頁第6頁第7頁第8頁第9頁第10頁第11頁第12頁第13頁第14頁第15頁第16頁第17頁第18頁第19頁第20頁第21頁第22頁第23頁第24頁第25頁第26頁第27頁第28頁第29頁第30頁第31頁第32頁第33頁第34頁第35頁第36頁第37頁第38頁第39頁第40頁第41頁第42頁第43頁第44頁第45頁第46頁
4
P/N:PM0556
REV. 1.3, NOV. 11, 2002
MX29F022/022NT/B
AUTOMATIC PROGRAMMING
The MX29F022T/B is byte programmable using the
Automatic Programming algorithm. The Automatic
Programming algorithm does not require the system to
time out or verify the data programmed. The typical chip
programming time of the MX29F022T/B at room tem-
perature is less than 2 seconds.
AUTOMATIC CHIP ERASE
The entire chip is bulk erased using 10ms erase pulses
according to MXIC's High Reliability Chip Erase
algorithm. Typical erasure at room temperature is
accomplished in less than two second. The device is
erased using the Automatic Erase algorithm. The
Automatic Erase algorithm automatically programs the
entire array prior to electrical erase. The timing and
verification of electrical erase are internally controlled
within the device.
AUTOMATIC SECTOR ERASE
The MX29F022T/B is sector(s) erasable using MXIC's
Auto Sector Erase algorithm. Sector erase modes allow
sectors of the array to be erased in one erase cycle. The
Automatic Sector Erase algorithm automatically pro-
grams the specified sector(s) prior to electrical erase.
The timing and verification of electrical erase are inter-
nally controlled by the device.
AUTOMATIC PROGRAMMING ALGORITHM
MXIC's Automatic Programming algorithm requires the
user to only write a program set-up commands (include
2 unlock write cycle and A0H) include 2 unlock write
cycle and A0H and a program command (program data
and address). The device automatically times the pro-
gramming pulse width, verifies the program verification,
and counts the number of sequences. A status bit simi-
lar to DATA polling and a status bit toggling between con-
secutive read cycles, provides feedback to the user as
to the status of the programming operation.
AUTOMATIC ERASE ALGORITHM
MXIC's Automatic Erase algorithm requires the user to
write commands to the command register using stan-
dard microprocessor write timings. The device will au-
tomatically pre-program and verify the entire array. Then
the device automatically times the erase pulse width,
verifies the erase, and counts the number of sequences.
A status bit similar to DATA polling and status bit tog-
gling between consecutive read cycles provides feed-
back to the user as to the status of the programming
operation.
Commands are written to the command register using
standard microprocessor write timings. Register con-
tents serve as inputs to an internal state-machine which
controls the erase and programming circuitry. During
write cycles, the command register internally latches
address and data needed for the programming and erase
operations. During a system write cycle addresses are
latched on the falling edge, and data are latched on the
rising edge of WE .
MXIC's Flash technology combines years of EPROM
experience to produce the highest levels of quality, reli-
ability, and cost effectiveness. The MX29F022T/B elec-
trically erases all bits simultaneously using Fowler-
Nordheim tunneling. The bytes are programmed one
byte at a time using the EPROM programming mecha-
nism of hot electron injection.
During a program cycle, the state-machine will control
the program sequences and command register will not
respond to any command set. During a Sector Erase
cycle, the command register will only respond to Erase
Suspend command. After Erase Suspend is completed,
the device stays in read mode. After the state machine
has completed its task, it will allow the command regis-
ter to respond to its full command set.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 29F022B-90 | 2M-BIT[256K x 8]CMOS FLASH MEMORY |
| 29F022T-12 | 2M-BIT[256K x 8]CMOS FLASH MEMORY |
| 29F022T-120 | 2M-BIT[256K x 8]CMOS FLASH MEMORY |
| 29F022T-55 | 2M-BIT[256K x 8]CMOS FLASH MEMORY |
| 29F022T-70 | 2M-BIT[256K x 8]CMOS FLASH MEMORY |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 29F022B-90 | 制造商:MCNIX 制造商全稱:Macronix International 功能描述:2M-BIT[256K x 8]CMOS FLASH MEMORY |
| 29F022T-12 | 制造商:MCNIX 制造商全稱:Macronix International 功能描述:2M-BIT[256K x 8]CMOS FLASH MEMORY |
| 29F022T-120 | 制造商:MCNIX 制造商全稱:Macronix International 功能描述:2M-BIT[256K x 8]CMOS FLASH MEMORY |
| 29F022T-55 | 制造商:MCNIX 制造商全稱:Macronix International 功能描述:2M-BIT[256K x 8]CMOS FLASH MEMORY |
| 29F022T-70 | 制造商:MCNIX 制造商全稱:Macronix International 功能描述:2M-BIT[256K x 8]CMOS FLASH MEMORY |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。