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參數資料
| 型號： | 29F040-90 |
| 廠商： | Macronix International Co., Ltd. |
| 英文描述： | 4M-BIT [512KX8] CMOS EQUAL SECTOR FLASH MEMORY |
| 中文描述： | 4分位[512KX8]的CMOS平等部門閃存 |
| 文件頁數： | 8/40頁 |
| 文件大?。?/td> | 604K |
| 代理商： | 29F040-90 |
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8
P/N:PM0538
REV. 2.3, DEC. 10, 2004
MX29F040
SECTOR ERASE COMMANDS
The Automatic Sector Erase does not require the device
to be entirely pre-programmed prior to executing the Au-
tomatic Set-up Sector Erase command and Automatic
Sector Erase command. Upon executing the Automatic
Sector Erase command, the device will automatically
program and verify the sector(s) memory for an all-zero
data pattern. The system is not required to provide any
control or timing during these operations.
When the sector(s) is automatically verified to contain
an all-zero pattern, a self-timed sector erase and verify
begin. The erase and verify operations are complete
when the data on Q7 is "1" and the data on Q6 stops
toggling for two consecutive read cycles, at which time
the device returns to the Read mode. The system is not
required to provide any control or timing during these
operations.
When using the Automatic Sector Erase algorithm, note
that the erase automatically terminates when adequate
erase margin has been achieved for the memory array
(no erase verification command is required). Sector erase
is a six-bus cycle operation. There are two "unlock"
write cycles. These are followed by writing the set-up
command 80H. Two more "unlock" write cycles are then
followed by the sector erase command 30H. The sector
address is latched on the falling edge of WE or CE, which-
ever happens later, while the command (data) is latched
on the rising edge of WE or CE, whichever happens first.
Sector addresses selected are loaded into internal reg-
ister on the sixth falling edge of WE or CE, whichever
happens later. Each successive sector load cycle
started by the falling edge of WE or CE, whichever hap-
pens later must begin within 30us from the rising edge
of the preceding WE or CE, whichever happens first.
Otherwise, the loading period ends and internal auto
sector erase cycle starts. (Monitor Q3 to determine if
the sector erase timer window is still open, see section
Q3, Sector Erase Timer.) Any command other than Sec-
tor Erase (30H) or Erase Suspend (B0H) during the time-
out period resets the device to read mode.
Status
Q7
Q6
Q5
Q3
Q2
Note1
Q7
0
1
Note2
0
0
0
Byte Program in Auto Program Algorithm
Auto Erase Algorithm
Toggle
Toggle
No
Toggle
Data
N/A
1
N/A
No Toggle
Toggle
Toggle
Erase Suspend Read
(Erase Suspended Sector)
Erase Suspend Read
(Non-Erase Suspended Sector)
Erase Suspend Program
In Progress
Erase Suspended Mode
Data
Data
Data
Data
Q7
Q7
0
Q7
Toggle
Toggle
Toggle
Toggle
0
1
1
1
N/A
N/A
1
N/A
N/A
Byte Program in Auto Program Algorithm
Auto Erase Algorithm
Time Limits Erase Suspend Program
No Toggle
Toggle
N/A
Exceeded
TABLE 4. Write Operation Status
Note:
1. Q7 and Q2 require a valid address when reading status information. Refer to the appropriate subsection for further
details.
2. Q5 switches to '1' when an Auto Program or Auto Erase operation has exceeded the maximum timing limits.
See "Q5:Exceeded Timing Limits " for more information.
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相關代理商/技術參數 |
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| 29F040C-55 | 制造商:MCNIX 制造商全稱:Macronix International 功能描述:4M-BIT [512K x 8] CMOS SINGLE VOLTAGE 5V ONLY EQUAL SECTOR FLASH MEMORY |
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| 29F040C-90 | 制造商:MCNIX 制造商全稱:Macronix International 功能描述:4M-BIT [512K x 8] CMOS SINGLE VOLTAGE 5V ONLY EQUAL SECTOR FLASH MEMORY |
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