參數(shù)資料
型號: 29F256
廠商: Texas Instruments, Inc.
英文描述: 262,144-BIT FLASH ELECTRICALLY ERASABLE PROGRAMMABLE READ-ONLY MEMORIES
中文描述: 262,144位閃存電可擦除可編程只讀存儲器
文件頁數(shù): 11/18頁
文件大小: 997K
代理商: 29F256
相關(guān)PDF資料
PDF描述
29F4000 4M-BIT [512Kx8/256Kx16] CMOS FLASH MEMORY
29F400B-12PI 4MEGABIT (512K x 8/ 256K x 16) 5VOLT SECTOR ERASE CMOS FLASH MEMORY
29F400B-12TC 4MEGABIT (512K x 8/ 256K x 16) 5VOLT SECTOR ERASE CMOS FLASH MEMORY
29F400B-12TI 4MEGABIT (512K x 8/ 256K x 16) 5VOLT SECTOR ERASE CMOS FLASH MEMORY
29F400B-90PC 4MEGABIT (512K x 8/ 256K x 16) 5VOLT SECTOR ERASE CMOS FLASH MEMORY
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