參數(shù)資料
型號: 29F400B-12PC
廠商: Electronic Theatre Controls, Inc.
英文描述: 4MEGABIT (512K x 8/ 256K x 16) 5VOLT SECTOR ERASE CMOS FLASH MEMORY
中文描述: 4MEGABIT(為512k × 8 / 256K × 16)5VOLT扇區(qū)擦除的CMOS閃存
文件頁數(shù): 21/38頁
文件大?。?/td> 240K
代理商: 29F400B-12PC
BRIGHT Preliminary BM29F400T/BM29F400B
Microelectronics
Inc.
A Winbond Company
Publication Release Date: May 1999
- 21 -
Revision A1
PARAMETER
RATING
UNIT
Commercial (C) Devices
0 to +70
°
C
°
C
°
C
V
Industrial (I) Devices
-40 to +85
Extended (I) Devices
-55 to +125
Vcc Supply Voltage
Vcc for BM29F400-90
+4.5 to 5.5
Note
:
Operating ranges define those limits between which the functionality of the device is guaranteed.
*Notice
: Stresses above those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. This is a
stress rating only; functional operation of the device at these or any other conditions above those indicated in the operational
sections of this specification is not implied. Exposure of the device to absolute maximum rating conditions for extended periods may
affect device reliability.
-2.0 V
-0.5 V
+0.8 V
20 nS
20 nS
20 nS
Figure 5.
Vcc + 2.0 V
Vcc + 0.5 V
2.0 V
20 nS
20 nS
20 nS
Figure 6.
Maximum Negative Overshoot Waveform
Maximum positive Overshoot Waveform
相關(guān)PDF資料
PDF描述
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