參數(shù)資料
型號(hào): 29F400B-12TI
廠商: Electronic Theatre Controls, Inc.
英文描述: 4MEGABIT (512K x 8/ 256K x 16) 5VOLT SECTOR ERASE CMOS FLASH MEMORY
中文描述: 4MEGABIT(為512k × 8 / 256K × 16)5VOLT扇區(qū)擦除的CMOS閃存
文件頁(yè)數(shù): 28/38頁(yè)
文件大?。?/td> 240K
代理商: 29F400B-12TI
BRIGHT Preliminary BM29F400T/BM29F400B
Microelectronics
Inc.
- 28 -
Switching Waveforms, continued
CE
OE
WE
Data
5.0V
V
CC
GND
t
CH
t
OE
t
DF
t
OH
t
OEH
t
CE
t
WHWH 1 or 2
t
OE
High
Z
DQ0-DQ7
DQ0-DQ6=Invalid
DQ7
DQ7=Valid Data
DQ0-DQ6
DQ7
Figure 11. AC Waveforms for Data Polling during Internal Algorithm Operations
Note: DQ7 = Valid Data (The device has completed the internal program or erase operation.)
CE
OE
WE
Data
5.0V
V
CC
GND
Data
(DQ0-DQ7)
DQ6=Toggle
DQ6=Toggle
DQ6=
Stop Toggling
DQ0-DQ7
Valid
t
OE
t
OES
t
OEH
Figure 12 AC Waveforms for Toggle Bit during Internal Algorithm Operation
Note:
DQ6 stops toggling (The device has completed the internal program or erase operation.)
相關(guān)PDF資料
PDF描述
29F400B-90PC 4MEGABIT (512K x 8/ 256K x 16) 5VOLT SECTOR ERASE CMOS FLASH MEMORY
29F400B-90PI 4MEGABIT (512K x 8/ 256K x 16) 5VOLT SECTOR ERASE CMOS FLASH MEMORY
29F400B-90TC 4MEGABIT (512K x 8/ 256K x 16) 5VOLT SECTOR ERASE CMOS FLASH MEMORY
29F400B-90TI 4MEGABIT (512K x 8/ 256K x 16) 5VOLT SECTOR ERASE CMOS FLASH MEMORY
29F400T-12PC 4MEGABIT (512K x 8/ 256K x 16) 5VOLT SECTOR ERASE CMOS FLASH MEMORY
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
29F400B-90PC 制造商:未知廠家 制造商全稱:未知廠家 功能描述:4MEGABIT (512K x 8/ 256K x 16) 5VOLT SECTOR ERASE CMOS FLASH MEMORY
29F400B-90PI 制造商:未知廠家 制造商全稱:未知廠家 功能描述:4MEGABIT (512K x 8/ 256K x 16) 5VOLT SECTOR ERASE CMOS FLASH MEMORY
29F400B-90TC 制造商:未知廠家 制造商全稱:未知廠家 功能描述:4MEGABIT (512K x 8/ 256K x 16) 5VOLT SECTOR ERASE CMOS FLASH MEMORY
29F400B-90TI 制造商:未知廠家 制造商全稱:未知廠家 功能描述:4MEGABIT (512K x 8/ 256K x 16) 5VOLT SECTOR ERASE CMOS FLASH MEMORY
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