參數(shù)資料
型號: 29F400B-90TI
廠商: Electronic Theatre Controls, Inc.
英文描述: 4MEGABIT (512K x 8/ 256K x 16) 5VOLT SECTOR ERASE CMOS FLASH MEMORY
中文描述: 4MEGABIT(為512k × 8 / 256K × 16)5VOLT扇區(qū)擦除的CMOS閃存
文件頁數(shù): 34/38頁
文件大?。?/td> 240K
代理商: 29F400B-90TI
BRIGHT Preliminary BM29F400T/BM29F400B
Microelectronics
Inc.
- 34 -
Erase and Programming Performance
PARAMETER
LIMITS
TYP.
0.33
2.4
16
MIN.
MAX.
15
120
400
200
UNIT
sec
sec
us
sec
cycles
Sector Erase Time
Chip Erase Time
Byte Programming Time
Chip Programming Time
Erase/Program Cycles
8
10,000
100,000
Latch Up Characteristics
PARAMETER
MIN.
-1.0V
MAX.
Vcc + 1.0V
Input Voltage with respect to Vss on all I/O
pins
Vcc Current
-100 mA
+ 100 mA
Note: Includes all pins except Vcc. Test conditions: Vcc = 5.0V, one pin at a time.
CAPACITANCE
TSOP Pin
PARAMETER
Input Capacitance
Output Capacitance
Control Pin Capacitance
SYMBOL
C
IN
C
OUT
C
IN2
TEST SETUP
V
IN
= 0
V
OUT
= 0
V
IN
= 0
TYP.
6
8.5
8
MAX.
7.5
12
10
UNIT
pF
pF
pF
Notes:
1. Sampled, not 100% tested.
2. Test conditions T
A
= 25
°
, f = 1.0 MHz.
SOP Pin
PARAMETER
Input Capacitance
Output Capacitance
Control Pin Capacitance
SYMBOL
C
IN
C
OUT
C
IN2
TEST SETUP
V
IN
= 0
V
OUT
= 0
V
IN
= 0
TYP.
6
8.5
8
MAX.
7.5
12
10
UNIT
pF
pF
pF
Notes:
1. Sampled, not 100% tested.
2. Test conditions TA = 25
°
, f = 1.0 MHz.
Data Retention
PARAMETER
TEST CONDITIONS
MIN.
UNIT
Minimum Pattern Data Retention Time
150
°
125
°
10
Years
Minimum Pattern Data Retention Time
20
Years
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