參數(shù)資料
型號(hào): 29F400T-12TI
廠商: Electronic Theatre Controls, Inc.
英文描述: 4MEGABIT (512K x 8/ 256K x 16) 5VOLT SECTOR ERASE CMOS FLASH MEMORY
中文描述: 4MEGABIT(為512k × 8 / 256K × 16)5VOLT扇區(qū)擦除的CMOS閃存
文件頁數(shù): 29/38頁
文件大?。?/td> 240K
代理商: 29F400T-12TI
BRIGHT Preliminary BM29F400T/BM29F400B
Microelectronics
Inc.
A Winbond Company
Publication Release Date: May 1999
- 29 -
Revision A1
Switching Waveforms, continued
CE
WE
BY/RY
5.0V
Vcc
GND
Entire programming
or erase operations
The rising edge of the last WE signal
t
BUSY
Figure 13. RY/BY Timing Diagram During Program/Erase Operation
RY/BY
RESET
Data
5.0V
GND
Vcc
Ready
RP
t
PWH
Vaild Data
Figure 14. /RESET Timing Diagram
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29F400T-90PC 4MEGABIT (512K x 8/ 256K x 16) 5VOLT SECTOR ERASE CMOS FLASH MEMORY
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29F400T-90TC 4MEGABIT (512K x 8/ 256K x 16) 5VOLT SECTOR ERASE CMOS FLASH MEMORY
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29F400B-12PC 4MEGABIT (512K x 8/ 256K x 16) 5VOLT SECTOR ERASE CMOS FLASH MEMORY
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29F400T-90PC 制造商:未知廠家 制造商全稱:未知廠家 功能描述:4MEGABIT (512K x 8/ 256K x 16) 5VOLT SECTOR ERASE CMOS FLASH MEMORY
29F400T-90PI 制造商:未知廠家 制造商全稱:未知廠家 功能描述:4MEGABIT (512K x 8/ 256K x 16) 5VOLT SECTOR ERASE CMOS FLASH MEMORY
29F400T-90TC 制造商:未知廠家 制造商全稱:未知廠家 功能描述:4MEGABIT (512K x 8/ 256K x 16) 5VOLT SECTOR ERASE CMOS FLASH MEMORY
29F400T-90TI 制造商:未知廠家 制造商全稱:未知廠家 功能描述:4MEGABIT (512K x 8/ 256K x 16) 5VOLT SECTOR ERASE CMOS FLASH MEMORY
29F516S050B 制造商:Micro Plastics Inc 功能描述: