參數(shù)資料
型號: 29LV160B
廠商: Macronix International Co., Ltd.
英文描述: 16M-BIT [2Mx8/1Mx16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY
中文描述: 1,600位[2Mx8/1Mx16] CMOS單電壓3V時僅閃存
文件頁數(shù): 23/63頁
文件大?。?/td> 762K
代理商: 29LV160B
23
P/N:PM1041
MX29LV160BT/BB
REV. 1.2, JUL. 01, 2004
R
29LV160BT/BB-70
29LV160BT/BB-90
Symbol PARAMETER
MIN.
MAX.
MIN.
MAX.
UNIT
CONDITIONS
tRC
Read Cycle Time (Note 1)
70
90
ns
tACC
Address to Output Delay
70
90
ns
CE=OE=VIL
tCE
CE to Output Delay
70
90
ns
OE=VIL
tOE
OE to Output Delay
30
30
ns
CE=VIL
tDF
OE High to Output Float (Note2)
0
25
0
25
ns
CE=VIL
tOEH
Output Enable Read
0
0
ns
Hold Time
Toggle and Data Polling 10
10
ns
tOH
Address to Output hold
0
0
ns
CE=OE=VIL
NOTE:
1. Not 100% tested.
2. tDF is defined as the time at which the output achieves
the open circuit condition and data is no longer driven.
TEST CONDITIONS:
Input pulse levels: 0V/3.0V.
Input rise and fall times is equal to or less than 5ns.
Output load: 1 TTL gate + 100pF (Including scope and
jig) for 29LV160BT/BB-90, 1 TTL gate + 30pF (Includ-
ing scope and jig) for 29LV160BT/BB-70.
Reference levels for measuring timing: 1.5V.
AC CHARACTERISTICS
TA = -40
o
C to 85
o
C, VCC = 2.7V~3.6V
Table 10. READ OPERATIONS
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